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SI2318CDS-T1-GE3
+StücklisteMOSFET N-CH 40V 5.6A SOT23-3
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HerstellerVishay Siliconix
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Herstellerteil #SI2318CDS-T1-GE3
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Paket SOT-23-3
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Auf Lager7373
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 5.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 42mOhm @ 4.3A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 340 pF @ 20 V |
| PowerDissipation(Max) | 1.25W (Ta), 2.1W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
Equivalent
Features
1. N-Channel MOSFET: This device is an N-channel enhancement-mode transistor, which means it is normally off when the gate-to-source voltage is zero and conducts when a positive voltage is applied.
2. Low On-Resistance: It typically exhibits low on-resistance, which ensures efficient current flow with minimal power loss.
3. Compact Package: Often available in small, surface-mount packages like the SOT-23, which saves space on printed circuit boards (PCBs).
4. Fast Switching Speed: Ideal for high-frequency applications due to its rapid switching capabilities.
5. Voltage and Current Ratings: Designed to handle a specific range of voltages and currents, making it suitable for various low to medium power applications.
6. Thermal Performance: Features efficient thermal management, which helps in maintaining performance under different temperature conditions.
These characteristics make the SI2318CDS-T1-GE3 suitable for a variety of applications, including power management, load switching, and motor control in consumer electronics.
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state. A voltage applied to the gate determines whether the MOSFET is turned on or off.
2. Source (S): This is the source terminal of the MOSFET, where current flows into the device when it is conducting.
3. Drain (D): This terminal acts as the output, where current flows out of the device when it is conducting.
In summary, the SI2318CDS-T1-GE3 is a three-pin device used in electronic circuits for switching and amplification purposes.