SI2318CDS-T1-GE3

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SI2318CDS-T1-GE3

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MOSFET N-CH 40V 5.6A SOT23-3

  • HerstellerVishay Siliconix

  • Herstellerteil #SI2318CDS-T1-GE3

  • Paket SOT-23-3

  • Auf Lager7373

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 5.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 42mOhm @ 4.3A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 9 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 340 pF @ 20 V
PowerDissipation(Max) 1.25W (Ta), 2.1W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

The course "Introduction to SI2318CDS-T1-GE3" appears to be a specialized module, likely within a specific academic or technical field. While the exact content isn't specified by the course code alone, it typically suggests an introductory level curriculum designed to give students foundational knowledge in an area related to the course identifier "SI2318CDS-T1-GE3." Generally, such a course would cover basic principles, theories, and methodologies pertinent to the subject matter. It may include lectures, discussions, and practical assignments to reinforce learning. Students can expect to gain essential skills and understanding necessary for more advanced study or professional application in the field. If this course is part of a larger program, it might serve as a prerequisite for more complex courses. For precise details, such as the syllabus, topics covered, and course objectives, one would need to refer to the institution offering the course or the specific academic department's course catalog.

Equivalent

The SI2318CDS-T1-GE3 is a MOSFET from Vishay. Equivalent products can include similar N-channel MOSFETs from other manufacturers, such as the IRLML2402 from Infineon, 2N7002K from Fairchild Semiconductor (now part of ON Semiconductor), and BSS138from Nexperia. When selecting equivalents, ensure matching specifications like voltage, current, and package type. Always consult datasheets to verify compatibility.

Features

The SI2318CDS-T1-GE3 is a type of N-channel MOSFET transistor, commonly used in electronic circuits for switching and amplification purposes. Here are some of its key features:
1. N-Channel MOSFET: This device is an N-channel enhancement-mode transistor, which means it is normally off when the gate-to-source voltage is zero and conducts when a positive voltage is applied.
2. Low On-Resistance: It typically exhibits low on-resistance, which ensures efficient current flow with minimal power loss.
3. Compact Package: Often available in small, surface-mount packages like the SOT-23, which saves space on printed circuit boards (PCBs).
4. Fast Switching Speed: Ideal for high-frequency applications due to its rapid switching capabilities.
5. Voltage and Current Ratings: Designed to handle a specific range of voltages and currents, making it suitable for various low to medium power applications.
6. Thermal Performance: Features efficient thermal management, which helps in maintaining performance under different temperature conditions.
These characteristics make the SI2318CDS-T1-GE3 suitable for a variety of applications, including power management, load switching, and motor control in consumer electronics.

Pinout

The SI2318CDS-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is typically used in power management applications. This component comes in a small SOT-23 package, which has a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state. A voltage applied to the gate determines whether the MOSFET is turned on or off.
2. Source (S): This is the source terminal of the MOSFET, where current flows into the device when it is conducting.
3. Drain (D): This terminal acts as the output, where current flows out of the device when it is conducting.
In summary, the SI2318CDS-T1-GE3 is a three-pin device used in electronic circuits for switching and amplification purposes.

Manufacturer

The SI2318CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for producing a wide range of products, including diodes, MOSFETs, resistors, inductors, capacitors, and sensors. These components are used in various applications across industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is recognized for its commitment to innovation, quality, and reliability, making it a prominent player in the electronics component industry.

Application

The SI2318CDS-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its compact design and efficient performance make it suitable for use in DC-DC converters, load switching, and battery management systems. It is often utilized in consumer electronics, portable devices, and computing applications where space-saving and energy efficiency are important. Additionally, it can be used in power supply circuits and motor control for enhancing the overall power efficiency and reliability of electronic systems.

Package

The SI2318CDS-T1-GE3 is a MOSFET transistor housed in a SOT-23 package type.

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