SI2323DDS-T1-GE3

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SI2323DDS-T1-GE3

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MOSFET P-CH 20V 5.3A SOT-23

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 5.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V
Rds On(Max) @ Id Vgs 39mOhm @ 4.1A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 36 nC @ 8 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 1160 pF @ 10 V
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23

Übersicht

Description

The SI2323DDS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in compact, high-efficiency applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 23 mΩ at 4.5V, reducing conduction losses.
- Small Footprint: Offered in a 3.3mm x 3.3mm PowerPAK® 1212-8 package, ideal for space-constrained designs.
- Voltage Rating: -30V drain-to-source (VDS), suitable for 12V–24V systems.
- Low Gate Charge (Qg): Enhances switching efficiency in high-frequency applications.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, automotive systems, and power supplies. Its lead-free, RoHS-compliant construction ensures environmental compliance.
For detailed specs, refer to the datasheet or Vishay’s product page.

Equivalent

Equivalent products to the SI2323DDS-T1-GE3 (P-channel MOSFET, 20V, 4.3A) include:
- AO3401 (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 5.2A)
- IRLML6402 (P-channel, 12V, 3.7A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact compatibility in your application.

Pinout

The SI2323DDS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G) – Controls the transistor's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-MOS).
3. Drain (D) – Output connection, conducts when the gate-source voltage is sufficiently negative.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in load switching, power management, and battery protection circuits.

Package

The SI2323DDS-T1-GE3 is a SOT-23-3 package type. This small, surface-mount package is commonly used for low-power MOSFETs, offering compact size and efficient performance in space-constrained applications. The SOT-23-3 has three pins and is widely utilized in consumer electronics, power management, and portable devices.

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