SI2343CDS-T1-GE3

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SI2343CDS-T1-GE3

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MOSFET P-CH 30V 5.9A SOT23-3

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 45mOhm @ 4.2A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 590 pF @ 15 V
PowerDissipation(Max) 1.25W (Ta), 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

The SI2343CDS-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switching, and battery protection.
Key Features:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Compact Package (TSOP-6): Saves board space in space-constrained designs.
- Fast Switching: Optimized for high-frequency operation.
- Low Gate Charge (Qg): Reduces drive losses, improving performance in switching circuits.
Typical Applications:
- Power supplies (synchronous rectification).
- Portable electronics (battery management).
- Motor control and LED drivers.
Voltage/Current Ratings:
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 6.5A
This MOSFET is ideal for high-performance, low-power systems requiring reliability and efficiency. For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI2343CDS-T1-GE3 (P-channel MOSFET, 20V, 4.3A) include:
- AO3401A (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 5.2A)
- IRLML6401 (P-channel, 12V, 4.3A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact specs like voltage, current, and package compatibility.

Features

The SI2343CDS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 40mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed
- Compact Package: SOT-23 (Space-saving)
- Low Gate Charge (Qg): 8.5nC (typical)
- AEC-Q101 Qualified (Automotive-grade reliability)
Ideal for power management, load switching, and battery protection in portable and automotive applications.

Pinout

The SI2343CDS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (P-channel).
3. Drain (D) – Output connection, switches to the source when activated.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) for efficient power switching.
Commonly used in load switching, power management, and battery protection circuits.

Application

The SI2343CDS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power efficiency.
3. Automotive Systems – Infotainment, lighting, and power distribution.
4. Consumer Electronics – TVs, gaming consoles, and USB power control.
5. Industrial Applications – Motor drives and power supply circuits.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.

Package

The SI2343CDS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package. This compact surface-mount package is widely used for low-power applications, offering a small footprint and reliable performance. It is suitable for portable electronics, power management, and switching circuits. The "T1" suffix typically indicates tape-and-reel packaging for automated assembly.

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