SI2347DS-T1-GE3

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SI2347DS-T1-GE3

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MOSFET P-CH 30V 5A SOT23-3

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 42mOhm @ 3.8A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 22 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 705 pF @ 15 V
Power Dissipation (Max) 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Übersicht

Description

The SI2347DS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -20V (drain-to-source)
- Current Rating: -6.3A (continuous drain current)
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -4.5V)
- Gate Threshold Voltage (VGS(th)): -1V (typical)
- Compact Package: PowerPAK® SC-75 (1.6mm x 1.6mm), ideal for space-constrained designs.
It’s optimized for load switching, battery protection, and DC-DC conversion in portable devices, power supplies, and automotive systems. The T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
Advantages:
- High efficiency due to low RDS(on).
- Fast switching performance.
- Small footprint for high-density PCB layouts.
Typical applications include power distribution, motor control, and reverse polarity protection.
For detailed specs, refer to the datasheet on Vishay’s website.

Equivalent

Equivalent products to the SI2347DS-T1-GE3 (P-channel MOSFET, 20V, 4.3A) include:
- AO3401A (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 5.2A)
- IRLML6401 (P-channel, 12V, 4.3A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.

Features

The SI2347DS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V, ensuring efficient power handling.
- Gate Threshold Voltage: -0.7V (typical), suitable for low-voltage applications.
- Fast Switching: Optimized for high-speed power management.
- Package: SOT-23 (3-pin), compact and space-saving.
- Applications: Power management, load switching, and battery protection in portable devices.
This MOSFET is designed for efficiency and reliability in low-voltage circuits.

Manufacturer

The SI2347DS-T1-GE3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components. Vishay specializes in producing diodes, MOSFETs, resistors, capacitors, and optoelectronics for industries like automotive, industrial, computing, and consumer electronics. Known for innovation and reliability, Vishay serves a broad range of high-performance applications. The SI2347DS-T1-GE3 is a P-channel MOSFET designed for power management.

Application

The SI2347DS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery-powered systems.
3. DC-DC Converters – Efficient power conversion in automotive and industrial applications.
4. Consumer Electronics – Power switching in smartphones, tablets, and wearables.
5. Automotive Systems – Low-voltage power control in infotainment and lighting.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.

Package

The SI2347DS-T1-GE3 is a SOT-23-3 (TO-236AB) package type. It's a small, surface-mount transistor with three pins, commonly used for low-power applications. The compact design makes it suitable for space-constrained PCBs.

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