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SI2356DS-T1-GE3
+StücklisteMOSFET N-CH 40V 4.3A TO236
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HerstellerVishay Siliconix
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Herstellerteil #SI2356DS-T1-GE3
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Datenblatt SI2356DS-T1-GE3 DataSheet
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Paket SOT-23-3
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Auf Lager4463
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 4.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 51mOhm @ 3.2A, 10V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 370 pF @ 20 V |
| PowerDissipation(Max) | 960mW (Ta), 1.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
The SI2356DS-T1-GE3 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), manufactured by Vishay Siliconix. This component is designed for use in electronic circuits that require efficient switching and amplification. It belongs to the family of N-channel MOSFETs, which are commonly used due to their fast switching speeds and low on-resistance characteristics.
Key specifications of the SI2356DS-T1-GE3 typically include a low drain-to-source on-resistance, which enhances its efficiency in power management applications. The device is often housed in a compact, surface-mount package like the SOT-23, making it suitable for space-constrained applications such as portable electronics and battery-powered devices.
This MOSFET is used in a variety of applications, including DC-DC converters, load switches, and power management circuits, where it helps in reducing power loss and improving overall circuit efficiency. Its robust design allows it to handle significant power levels, making it a reliable choice for many electronic projects.
Key specifications of the SI2356DS-T1-GE3 typically include a low drain-to-source on-resistance, which enhances its efficiency in power management applications. The device is often housed in a compact, surface-mount package like the SOT-23, making it suitable for space-constrained applications such as portable electronics and battery-powered devices.
This MOSFET is used in a variety of applications, including DC-DC converters, load switches, and power management circuits, where it helps in reducing power loss and improving overall circuit efficiency. Its robust design allows it to handle significant power levels, making it a reliable choice for many electronic projects.
Equivalent
The SI2356DS-T1-GE3 is a P-channel MOSFET. Equivalent products may include:
1. IRF9520N - P-channel MOSFET with similar specifications.
2. FDS6679 - Fairchild's P-channel MOSFET.
3. AO3401 - AOS's P-channel MOSFET.
4. NTJS3151P - ON Semiconductor's P-channel MOSFET.
Ensure to check the datasheets for specific parameters like voltage, current ratings, and package type to confirm compatibility with your application.
1. IRF9520N - P-channel MOSFET with similar specifications.
2. FDS6679 - Fairchild's P-channel MOSFET.
3. AO3401 - AOS's P-channel MOSFET.
4. NTJS3151P - ON Semiconductor's P-channel MOSFET.
Ensure to check the datasheets for specific parameters like voltage, current ratings, and package type to confirm compatibility with your application.
Features
The SI2356DS-T1-GE3 is a P-channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Low On-Resistance: Offers low R_DS(on) which minimizes power loss and improves efficiency.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) of up to -20V.
3. Current Handling: Can handle continuous drain current, enhancing its suitability for various applications.
4. Compact Package: Available in a small SOT-23 package, making it suitable for space-constrained designs.
5. Fast Switching Speed: Enables rapid switching, ideal for high-frequency applications.
6. Low Gate Charge: Reduces the drive losses and improves overall performance in switching applications.
7. Thermal Efficiency: Designed to operate effectively over a range of temperatures, providing reliability under various conditions.
8. Applications: Suitable for use in DC-DC converters, power management systems, load switching, and other electronic applications requiring efficient power control.
These features make the SI2356DS-T1-GE3 a versatile and efficient choice for modern electronic designs.
1. Low On-Resistance: Offers low R_DS(on) which minimizes power loss and improves efficiency.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) of up to -20V.
3. Current Handling: Can handle continuous drain current, enhancing its suitability for various applications.
4. Compact Package: Available in a small SOT-23 package, making it suitable for space-constrained designs.
5. Fast Switching Speed: Enables rapid switching, ideal for high-frequency applications.
6. Low Gate Charge: Reduces the drive losses and improves overall performance in switching applications.
7. Thermal Efficiency: Designed to operate effectively over a range of temperatures, providing reliability under various conditions.
8. Applications: Suitable for use in DC-DC converters, power management systems, load switching, and other electronic applications requiring efficient power control.
These features make the SI2356DS-T1-GE3 a versatile and efficient choice for modern electronic designs.
Pinout
The SI2356DS-T1-GE3 is a N-channel MOSFET produced by Vishay Siliconix. It is designed for use in various applications such as load switching and power management. This MOSFET comes in a compact SOT-23 package, which typically has 3 pins.
The pin configuration for the SI2356DS-T1-GE3 is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off by applying a voltage.
2. Source (S): This pin is connected to the ground or source voltage, allowing current to flow through the MOSFET when it is on.
3. Drain (D): This pin is where the current flows out when the MOSFET is conducting.
The SI2356DS-T1-GE3 is used in power management applications due to its low on-resistance and fast switching speeds, making it suitable for efficient power conversion and distribution tasks.
The pin configuration for the SI2356DS-T1-GE3 is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off by applying a voltage.
2. Source (S): This pin is connected to the ground or source voltage, allowing current to flow through the MOSFET when it is on.
3. Drain (D): This pin is where the current flows out when the MOSFET is conducting.
The SI2356DS-T1-GE3 is used in power management applications due to its low on-resistance and fast switching speeds, making it suitable for efficient power conversion and distribution tasks.
Manufacturer
The SI2356DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company is known for producing a wide range of products including diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors. Vishay's components are used in various industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. Founded in 1962, Vishay has established itself as a significant player in the electronic components industry, known for high-quality, reliable products that support a wide array of electronic applications.
Application
The SI2356DS-T1-GE3 is a N-channel MOSFET commonly used in various electronic applications. Its primary application areas include power management for portable devices, DC-DC converters, load switching, and battery protection circuits. Due to its low on-resistance and fast switching capabilities, it is ideal for use in high-efficiency power supply circuits and motor drive controllers. Additionally, it can be employed in telecommunications equipment and industrial control systems where compact, efficient power management is essential. Its small form factor makes it suitable for space-constrained applications.
Package
The SI2356DS-T1-GE3 is a surface-mount N-channel MOSFET with a package type of SC-89. It's designed for small size and low-profile applications, offering efficient power management in compact devices.
