SI2371EDS-T1-GE3

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SI2371EDS-T1-GE3

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MOSFET P-CH 30V 4.8A SOT-23

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Spezifikationen

Attribut Wert
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 4.8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V
Rds On(Max) @ Id Vgs 45mOhm @ 3.7A, 10V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 35 nC @ 10 V
Vgs(Max) ±12V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23

Übersicht

Description

"Introduction to SI2371EDS-T1-GE3" likely refers to an introductory course or module code. It may be part of a curriculum in higher education, possibly within a program related to engineering, data science, or a similar field. The "SI" could stand for a department or subject area like Systems Integration or Software Integration, "EDS" might denote a focus on Electronic Data Systems, and "GE3" could indicate a specific level or version of the course.
The course would typically cover foundational topics relevant to its field, introducing key concepts, methodologies, and tools essential for understanding and solving industry-specific problems. It may include lectures, practical sessions, and assessments to ensure students gain both theoretical knowledge and practical skills.
For detailed information about the course content, objectives, and prerequisites, you would need to refer to the syllabus or contact the educational institution offering the course.

Equivalent

The SI2371EDS-T1-GE3 is a P-Channel MOSFET. Equivalent products might include:
1. BSL206S from Infineon
2. DMN1022UFB4-7 from Diodes Incorporated
3. PMV48XP from Nexperia
Ensure to compare specifications such as voltage, current rating, RDS(on), and package to confirm compatibility for your particular application. Always consult datasheets for detailed matching.

Features

The SI2371EDS-T1-GE3 is a N-channel MOSFET designed for efficient switching and power management applications. Key features include:
1. Compact Package: It is housed in a PowerPAK® SC-70 package, which provides a small footprint, ideal for space-constrained designs.
2. Low On-Resistance: Offers low RDS(on) values, enhancing efficiency by reducing power losses during conduction.
3. High Power Density: Supports high power density applications due to its efficient design and thermal performance.
4. Fast Switching Speed: Helps in reducing switching losses and is suitable for high-frequency applications.
5. RoHS Compliant: Environmentally friendly design adheres to RoHS standards, minimizing the use of hazardous substances.
6. Thermal Performance: Optimized for excellent thermal management, allowing it to operate effectively in various environmental conditions.
7. Automotive and Industrial Applications: Suitable for use in automotive and industrial sectors due to its reliability and robust performance.
These features make the SI2371EDS-T1-GE3 a versatile choice for designers looking for a reliable and compact MOSFET solution.

Pinout

The SI2371EDS-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is a power MOSFET designed for low-voltage applications. This specific model comes in a compact, surface-mount package known as the PowerPAK® SC-70.
The SI2371EDS-T1-GE3 features a dual pin configuration with a total of 6 pins. The pin functions are as follows:
1. Gate (G): The control terminal. Applying a voltage here turns the MOSFET on or off.
2. Source (S): One of the terminals through which current flows. It is the terminal where the charge carriers enter the MOSFET.
3. Drain (D): The terminal through which current flows out. It is connected to the load in most circuit applications.
This MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for applications such as DC-DC converters, load switches, and power management in various electronic devices.

Manufacturer

The SI2371EDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for its production of discrete semiconductors and passive electronic components. These components are essential for a wide range of electronic devices and systems, including those used in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay Intertechnology is recognized for its extensive portfolio of products, which includes diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors, among others. The company was founded in 1962 and has grown through a series of acquisitions and innovations to become one of the largest manufacturers of electronic components in the world. Vishay is headquartered in Malvern, Pennsylvania, USA, and operates manufacturing facilities and sales offices worldwide.

Application

The SI2371EDS-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various applications. Its primary use is in power management systems due to its efficient switching capabilities and low on-resistance. Common application areas include:
1. DC-DC Converters: Enhances efficiency in power conversion processes.
2. Load Switches: Used in battery-powered devices for efficient power control.
3. Motor Drives: Controls motor speed and torque in compact electronic applications.
4. LED Lighting: Regulates power efficiently to maintain brightness and extend LED life.
5. Power Supplies: Improves the efficiency and reliability of switched-mode power supplies.
Its compact design and efficiency make it suitable for space-constrained and energy-sensitive applications.

Package

The SI2371EDS-T1-GE3 is a MOSFET transistor packaged in a small, surface-mount, and lead-free package known as the PowerPAK® 1212-8. This package type provides efficient thermal performance and is suitable for high-density applications, typically used in power management and switching applications.

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