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SI2371EDS-T1-GE3
+StücklisteMOSFET P-CH 30V 4.8A SOT-23
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HerstellerVishay Siliconix
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Herstellerteil #SI2371EDS-T1-GE3
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Datenblatt SI2371EDS-T1-GE3 DataSheet
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Auf Lager3040
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 4.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 45mOhm @ 3.7A, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±12V |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
Übersicht
Description
The course would typically cover foundational topics relevant to its field, introducing key concepts, methodologies, and tools essential for understanding and solving industry-specific problems. It may include lectures, practical sessions, and assessments to ensure students gain both theoretical knowledge and practical skills.
For detailed information about the course content, objectives, and prerequisites, you would need to refer to the syllabus or contact the educational institution offering the course.
Equivalent
1. BSL206S from Infineon
2. DMN1022UFB4-7 from Diodes Incorporated
3. PMV48XP from Nexperia
Ensure to compare specifications such as voltage, current rating, RDS(on), and package to confirm compatibility for your particular application. Always consult datasheets for detailed matching.
Features
1. Compact Package: It is housed in a PowerPAK® SC-70 package, which provides a small footprint, ideal for space-constrained designs.
2. Low On-Resistance: Offers low RDS(on) values, enhancing efficiency by reducing power losses during conduction.
3. High Power Density: Supports high power density applications due to its efficient design and thermal performance.
4. Fast Switching Speed: Helps in reducing switching losses and is suitable for high-frequency applications.
5. RoHS Compliant: Environmentally friendly design adheres to RoHS standards, minimizing the use of hazardous substances.
6. Thermal Performance: Optimized for excellent thermal management, allowing it to operate effectively in various environmental conditions.
7. Automotive and Industrial Applications: Suitable for use in automotive and industrial sectors due to its reliability and robust performance.
These features make the SI2371EDS-T1-GE3 a versatile choice for designers looking for a reliable and compact MOSFET solution.
Pinout
The SI2371EDS-T1-GE3 features a dual pin configuration with a total of 6 pins. The pin functions are as follows:
1. Gate (G): The control terminal. Applying a voltage here turns the MOSFET on or off.
2. Source (S): One of the terminals through which current flows. It is the terminal where the charge carriers enter the MOSFET.
3. Drain (D): The terminal through which current flows out. It is connected to the load in most circuit applications.
This MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for applications such as DC-DC converters, load switches, and power management in various electronic devices.
Manufacturer
Application
1. DC-DC Converters: Enhances efficiency in power conversion processes.
2. Load Switches: Used in battery-powered devices for efficient power control.
3. Motor Drives: Controls motor speed and torque in compact electronic applications.
4. LED Lighting: Regulates power efficiently to maintain brightness and extend LED life.
5. Power Supplies: Improves the efficiency and reliability of switched-mode power supplies.
Its compact design and efficiency make it suitable for space-constrained and energy-sensitive applications.