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SI3458BDV-T1-GE3
+StücklisteMOSFET N-CH 60V 4.1A 6TSOP
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HerstellerVishay Siliconix
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Herstellerteil #SI3458BDV-T1-GE3
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI3458 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
