SI4134DY-T1-GE3

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SI4134DY-T1-GE3

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MOSFET N-CH 30V 14A 8SO

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Spezifikationen

Attribut Wert
Series TrenchFET®
Part Status Active
Base Product Number SI4134
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 846 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The SI4134DY-T1-GE3 is a dual N-channel MOSFET from Vishay, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control. Key features include:
- Low On-Resistance (RDS(on)): Minimizes conduction losses.
- Fast Switching: Enhances efficiency in high-frequency circuits.
- Compact PowerPAK® SO-8 Package: Saves board space while improving thermal performance.
- Wide Voltage Range: Suitable for 20V operations.
Ideal for automotive, industrial, and consumer electronics, it offers robust performance with AEC-Q101 qualification for reliability.

Equivalent

Equivalent products to the SI4134DY-T1-GE3 (Vishay dual N-channel MOSFET) include:
- IRLML6402TRPBF (Infineon)
- DMN2019LSN-7 (Diodes Inc.)
- BSS138 (Nexperia, lower current rating)
- AO3400A (Alpha & Omega)
These are similar dual N-channel MOSFETs with comparable voltage/current ratings. Verify specs for exact compatibility.

Pinout

The SI4134DY-T1-GE3 is a dual P-channel MOSFET in a SOIC-8 package with 8 pins.
### Pin Functions:
- Pins 1, 2, 3 (Drain 1, Drain 2, Drain 3): Connected to the drains of the two MOSFETs.
- Pin 4 (Gate 2): Control input for the second MOSFET.
- Pin 5 (Source 2): Source connection for the second MOSFET.
- Pin 6 (Source 1): Source connection for the first MOSFET.
- Pin 7 (Gate 1): Control input for the first MOSFET.
- Pin 8 (Drain 4): Additional drain connection (may be internally tied).
### Key Features:
- Dual P-channel MOSFET (30V, -4.3A).
- Low on-resistance (RDS(on)) for efficient power switching.
- SOIC-8 package, suitable for space-constrained applications.
Used in power management, load switching, and battery protection circuits.

Package

The SI4134DY-T1-GE3 is a PowerPAK® SO-8 package, which is a compact, surface-mount design optimized for high-power applications. It features an exposed thermal pad for enhanced heat dissipation, making it suitable for efficient power management in space-constrained designs. The package is lead-free and RoHS compliant.

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