SI4401DDY-T1-GE3

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SI4401DDY-T1-GE3

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MOSFET P-CH 40V 16.1A 8SO

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 16.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 15mOhm @ 10.2A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 95 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3007 pF @ 20 V
PowerDissipation(Max) 2.5W (Ta), 6.3W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Übersicht

Description

The SI4401DDY-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in applications like load switching, battery protection, and DC-DC conversion. Key features include:
- Low on-resistance (RDS(on)): 12 mΩ (max) at VGS = -10 V, enhancing efficiency.
- High current handling: -30 A continuous drain current.
- Compact package: PowerPAK® SO-8, saving board space.
- Wide voltage range: -30 V drain-to-source voltage (VDS).
- Logic-level gate drive: Optimized for -4.5 V to -10 V gate-to-source voltage (VGS).
Ideal for portable electronics, power supplies, and automotive systems, it offers reliable performance with low power loss.

Equivalent

Equivalent products to the SI4401DDY-T1-GE3 (P-channel MOSFET, 30V, 5.8A) include:
- AO3401A (P-channel, 30V, 4A)
- IRLML6401 (P-channel, 30V, 4.3A)
- DMG2305UX (P-channel, 30V, 5.7A)
- FDC5612P (P-channel, 30V, 5A)
Check datasheets for exact specs and pin compatibility.

Features

The SI4401DDY-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDS).
- Current Rating: -5.8A continuous drain current (ID).
- Low On-Resistance: 60mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -2.5V (VGS(th)).
- Fast Switching: Low gate charge (Qg) and capacitance for efficient performance.
- Package: PowerPAK® SO-8 for compact, high-power applications.
- Applications: Power management, load switching, and battery protection.
Designed for efficiency and reliability in space-constrained designs.

Application

The SI4401DDY-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power efficiency.
3. Automotive Systems – Infotainment, lighting, and power distribution.
4. Industrial Applications – Motor control and power supply modules.
5. Consumer Electronics – TVs, gaming consoles, and USB power delivery.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.

Package

The SI4401DDY-T1-GE3 is a MOSFET housed in a DFN-8 (3x3) package. This compact, surface-mount package offers efficient thermal performance and space-saving design, suitable for high-density PCB applications. The "T1" suffix indicates tape-and-reel packaging for automated assembly.

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