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SI4425DDY-T1-GE3
+StücklisteMOSFET P-CH 30V 19.7A 8SO
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HerstellerVishay Siliconix
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Herstellerteil #SI4425DDY-T1-GE3
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Datenblatt SI4425DDY-T1-GE3 DataSheet
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Paket SOIC-8
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Auf Lager6566
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 19.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 9.8mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2610 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
The SI4425DDY-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. This component is designed for applications requiring high efficiency and fast switching, such as in power management circuits, DC-DC converters, and load switching.
Key features of the SI4425DDY-T1-GE3 include:
- Two N-channel MOSFETs in a single package.
- Low on-resistance, which minimizes power loss and heat generation.
- Fast switching speeds suited for high-frequency operations.
- A small, surface-mount package (typically SO-8), which is ideal for space-constrained applications.
The device operates with low voltage and current, making it suitable for portable and battery-powered devices. It handles moderate power levels efficiently while maintaining reliability and performance. With its RoHS-compliant lead-free finish, it meets environmental and safety standards. When selecting this MOSFET, consider the specific electrical characteristics and ratings to ensure compatibility with your application requirements.
Key features of the SI4425DDY-T1-GE3 include:
- Two N-channel MOSFETs in a single package.
- Low on-resistance, which minimizes power loss and heat generation.
- Fast switching speeds suited for high-frequency operations.
- A small, surface-mount package (typically SO-8), which is ideal for space-constrained applications.
The device operates with low voltage and current, making it suitable for portable and battery-powered devices. It handles moderate power levels efficiently while maintaining reliability and performance. With its RoHS-compliant lead-free finish, it meets environmental and safety standards. When selecting this MOSFET, consider the specific electrical characteristics and ratings to ensure compatibility with your application requirements.
Equivalent
The SI4425DDY-T1-GE3 is a dual N-channel MOSFET. Equivalent products include:
1. FDS6679 - by ON Semiconductor
2. IRF7342 - by Infineon Technologies
3. FDMA1027PZ - by ON Semiconductor
4. NTMS4925N - by ON Semiconductor
These parts have similar electrical characteristics and package types but always verify specifications and compatibility before replacing.
1. FDS6679 - by ON Semiconductor
2. IRF7342 - by Infineon Technologies
3. FDMA1027PZ - by ON Semiconductor
4. NTMS4925N - by ON Semiconductor
These parts have similar electrical characteristics and package types but always verify specifications and compatibility before replacing.
Features
The SI4425DDY-T1-GE3 is an N-channel MOSFET produced by Vishay Siliconix. Key features include:
1. Type: N-channel enhancement-mode MOSFET.
2. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
3. Current Rating: The continuous drain current (I_D) is rated at 15A.
4. R_DS(on): Low on-resistance, typically around 4.5 mΩ at a gate-source voltage (V_GS) of 10V.
5. Package: Available in a compact SO-8 package, suitable for space-constrained applications.
6. Thermal Performance: Good thermal performance with a maximum junction temperature (T_J) of 150°C.
7. Applications: Ideal for use in power management, switching applications, and load switching.
8. Efficiency: Designed for high efficiency with fast switching speeds.
9. Safe Operating Area: Provides safe operating area protection for reliability.
10. Compliance: RoHS compliant, meeting environmental standards for hazardous substances.
These features make the SI4425DDY-T1-GE3 a versatile component for various electronic and power management applications.
1. Type: N-channel enhancement-mode MOSFET.
2. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
3. Current Rating: The continuous drain current (I_D) is rated at 15A.
4. R_DS(on): Low on-resistance, typically around 4.5 mΩ at a gate-source voltage (V_GS) of 10V.
5. Package: Available in a compact SO-8 package, suitable for space-constrained applications.
6. Thermal Performance: Good thermal performance with a maximum junction temperature (T_J) of 150°C.
7. Applications: Ideal for use in power management, switching applications, and load switching.
8. Efficiency: Designed for high efficiency with fast switching speeds.
9. Safe Operating Area: Provides safe operating area protection for reliability.
10. Compliance: RoHS compliant, meeting environmental standards for hazardous substances.
These features make the SI4425DDY-T1-GE3 a versatile component for various electronic and power management applications.
Pinout
The SI4425DDY-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It typically features an SO-8 package, which has 8 pins. Here's a concise description of the pin functions:
1. Drain1 (D1): Connected to the drain of the first MOSFET.
2. Source1 (S1): Connected to the source of the first MOSFET.
3. Gate1 (G1): Connected to the gate of the first MOSFET.
4. Source1 (S1): Another connection to the source of the first MOSFET.
5. Source2 (S2): Connected to the source of the second MOSFET.
6. Gate2 (G2): Connected to the gate of the second MOSFET.
7. Source2 (S2): Another connection to the source of the second MOSFET.
8. Drain2 (D2): Connected to the drain of the second MOSFET.
These MOSFETs are used primarily for switching applications due to their low on-resistance and high-speed switching capabilities. For precise specifications and electrical characteristics, refer to the datasheet provided by the manufacturer.
1. Drain1 (D1): Connected to the drain of the first MOSFET.
2. Source1 (S1): Connected to the source of the first MOSFET.
3. Gate1 (G1): Connected to the gate of the first MOSFET.
4. Source1 (S1): Another connection to the source of the first MOSFET.
5. Source2 (S2): Connected to the source of the second MOSFET.
6. Gate2 (G2): Connected to the gate of the second MOSFET.
7. Source2 (S2): Another connection to the source of the second MOSFET.
8. Drain2 (D2): Connected to the drain of the second MOSFET.
These MOSFETs are used primarily for switching applications due to their low on-resistance and high-speed switching capabilities. For precise specifications and electrical characteristics, refer to the datasheet provided by the manufacturer.
Manufacturer
The SI4425DDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design, manufacture, and supply of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA. Vishay's product portfolio includes a wide range of components such as diodes, MOSFETs, resistors, capacitors, inductors, sensors, and optoelectronics, which are used in a variety of industries, including automotive, industrial, consumer, computing, telecommunications, power supplies, military, aerospace, and medical markets. Vishay is known for its innovation in electronic components and plays a crucial role in the technology supply chain, supporting numerous applications and helping to drive advancements in electronics.
Application
The SI4425DDY-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various applications due to its efficiency and switching capabilities. Key application areas include:
1. Power Management: Used in voltage regulators and converters to manage power efficiently in electronic devices.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Load Switching: Acts as a switch for controlling high-power loads in circuits.
4. Battery Management Systems: Helps in managing charging and discharging cycles of batteries.
5. Signal Amplification: Used in amplification circuits due to its high input impedance and fast switching.
These applications leverage the MOSFET’s low on-resistance and fast switching speeds for improved performance.
1. Power Management: Used in voltage regulators and converters to manage power efficiently in electronic devices.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Load Switching: Acts as a switch for controlling high-power loads in circuits.
4. Battery Management Systems: Helps in managing charging and discharging cycles of batteries.
5. Signal Amplification: Used in amplification circuits due to its high input impedance and fast switching.
These applications leverage the MOSFET’s low on-resistance and fast switching speeds for improved performance.
Package
The SI4425DDY-T1-GE3 is a MOSFET in a PowerPAK® SO-8 package. This package type is designed to provide low thermal resistance and efficient power dissipation. It is commonly used in power management applications, providing space-saving benefits while delivering high performance.
