Abbildungen dienen nur als Referenz
SI4447DY-T1-GE3
+StücklisteMOSFET P-CH 40V 3.3A 8SO
-
HerstellerVishay Siliconix
-
Herstellerteil #SI4447DY-T1-GE3
-
Auf Lager8342
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI4447 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 4.5A, 15V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 20 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
