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SI4804BDY-T1-GE3
+StücklisteMOSFET 2N-CH 30V 5.7A 8SOIC
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HerstellerVishay Siliconix
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Herstellerteil #SI4804BDY-T1-GE3
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Datenblatt SI4804BDY-T1-GE3 DataSheet
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Paket SOIC-8
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Auf Lager4330
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5.7A |
| Rds On(Max) @ Id Vgs | 22mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 4.5V |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
