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SI4835DDY-T1-GE3
+StücklisteMOSFET P-CH 30V 13A 8SO
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HerstellerVishay Siliconix
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Herstellerteil #SI4835DDY-T1-GE3
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Datenblatt SI4835DDY-T1-GE3 DataSheet
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Paket SOIC-8
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Auf Lager5040
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1960 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 5.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -5.8A (continuous drain current)
- Low On-Resistance: 47mΩ (max at VGS = -10V)
- Compact Package: PowerPAK® SC-70 (3-pin), ideal for space-constrained designs
- Low Gate Charge (Qg): Enhances switching efficiency
Common applications include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
This MOSFET is optimized for low-voltage, high-performance scenarios, balancing efficiency and thermal performance.
Equivalent
- Infineon IPD90N04S4-04
- ON Semiconductor NTD4806N
- STMicroelectronics STL110N4F3
- Vishay SiR626DP
These alternatives offer similar specifications (e.g., 30V, 50A, low RDS(on)) for power switching applications. Verify compatibility for your design.
Features
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance: 47mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg = 12nC typical)
- Power Efficiency: Low power loss for high-performance applications
- Package: DFN (3.3mm x 3.3mm), compact and space-saving
- Applications: Power management, load switching, battery protection
Designed for efficiency and reliability in portable and automotive systems.
Pinout
### Pin Functions:
- Pins 1, 2, 3 (Source 1, Gate 1, Drain 1): First MOSFET channel.
- Pins 6, 7, 8 (Drain 2, Gate 2, Source 2): Second MOSFET channel.
- Pins 4, 5: Typically no connection (NC) or thermal pad (exposed for heat dissipation).
### Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power switching.
- Compact SO-8 footprint for space-constrained designs.
Used in power management, DC-DC converters, and load switching.
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets, wearables.
5. Automotive Systems – Infotainment, lighting, sensors.
Its compact DFN-8 package and low on-resistance make it ideal for space-constrained, high-efficiency applications.
