SI4840BDY-T1-GE3

Abbildungen dienen nur als Referenz

SI4840BDY-T1-GE3

+Stückliste

MOSFET N-CH 40V 19A 8SO

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 19A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 9mOhm @ 12.4A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2000 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Übersicht

Description

The SI4840BDY-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in applications like load switching, battery protection, and DC-DC conversion. Key features include:
- Voltage Rating: -40V
- Current Rating: -6.5A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) at VGS = -10V
- Compact Package: PowerPAK® SO-8 for efficient thermal performance
- AEC-Q101 Qualified: Suitable for automotive applications
This MOSFET is optimized for high efficiency and low power loss, making it ideal for portable electronics, automotive systems, and power supplies. Its T1-GE3 suffix indicates enhanced performance and reliability.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI4840BDY-T1-GE3 (a 40V N-channel MOSFET) include:
- Infineon BSC093N04LSG
- ON Semiconductor NTTFS4C05N
- Vishay SiR494DP
- STMicroelectronics STL120N4F3
These alternatives offer similar voltage (30V–60V), current ratings (30A–100A), and low RDS(on). Verify specs for exact compatibility with your design.

Pinout

The SI4840BDY-T1-GE3 is a 20-pin MOSFET in a PowerPAK® SO-8 package.
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- High current handling (suitable for power management in DC-DC converters, motor control, and load switches).
Pin Configuration:
- Pins 1-8: Gate, Drain, and Source connections for both MOSFETs (refer to datasheet for exact mapping).
- Pins 9-20: Thermal pads (improve heat dissipation).
Applications:
- Power supplies, battery management, and automotive systems.
For exact pinout, consult the datasheet.

Application

The SI4840BDY-T1-GE3 is a dual N-channel MOSFET optimized for high-efficiency power management in compact, low-voltage applications. Key areas include:
- DC-DC Converters: Used in voltage regulation for portable devices.
- Load Switching: Efficient power distribution in battery-powered systems.
- Motor Control: Drives small motors in consumer electronics.
- Power Supplies: Enhances efficiency in low-power SMPS designs.
Its small footprint (DFN-6), low on-resistance, and fast switching make it ideal for space-constrained, energy-sensitive applications like smartphones, tablets, and IoT devices.

Package

The SI4840BDY-T1-GE3 comes in a PowerPAK SO-8 package, which is a compact, surface-mount design optimized for high-power applications. It features an exposed thermal pad for improved heat dissipation. The package dimensions are approximately 4.90mm x 3.90mm x 1.75mm. Suitable for space-constrained designs, it ensures efficient thermal performance in power management circuits.

Produkte, die mit SI4840BDY-T1-GE3 zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für SI4840BDY-T1-GE3 Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.