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SI4848DY-T1-GE3
+StücklisteMOSFET N-CH 150V 2.7A 8SO
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HerstellerVishay Siliconix
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Herstellerteil #SI4848DY-T1-GE3
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Paket SOIC-8
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Auf Lager6606
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
- Frequency Range: AM (520–1710 kHz), FM (64–108 MHz), and SW (2.3–26.1 MHz).
- Digital Tuning: I²C interface for precise control.
- Low Power: Optimized for battery-operated devices.
- Integrated DSP: Enhances signal processing and audio quality.
- Small Footprint: 20-pin SOIC package for compact designs.
Ideal for radios, portable media players, and IoT audio devices, it simplifies design with minimal external components. The GE3 suffix indicates RoHS compliance and lead-free packaging.
For detailed specs, refer to the datasheet.
Equivalent
- SI4840-A10 (similar functionality, different package)
- TEF6638 (NXP, advanced tuner)
- TDA18250 (NXP, broadband tuner)
- MAX2112 (Maxim, satellite tuner)
These alternatives vary in features but serve similar RF tuning purposes. Check datasheets for exact compatibility.
Features
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 10A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1.5V (typ)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is designed for high performance and efficiency in space-constrained designs.
Pinout
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Designed for high-efficiency DC-DC conversion and load switching in compact applications.
Pinout Highlights:
- Pins 1, 2, 3, 4 (Gate1, Source1, Drain1) for the first MOSFET.
- Pins 5, 6, 7, 8 (Drain2, Source2, Gate2) for the second MOSFET.
- Exposed thermal pad (bottom) for heat dissipation.
Applications:
- Power management in portable devices, servers, and automotive systems.
Manufacturer
The SI4848DY-T1-GE3 is a dual N-channel MOSFET designed for power management applications, offering low on-resistance and high efficiency.
