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SI4850EY-T1-E3
+StücklisteMOSFET N-CH 60V 6A 8SO
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HerstellerVishay Siliconix
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Herstellerteil #SI4850EY-T1-E3
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Datenblatt SI4850EY-T1-E3 DataSheet
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Paket SOIC-8
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Auf Lager7535
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
The SI4850EY-T1-E3 refers to a specific model of a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is designed for use in power management applications, offering low on-resistance and efficient switching capabilities. This MOSFET is typically used in DC-DC converters, motor drives, and power management systems.
Key features include a low threshold voltage, which allows for efficient operation at lower gate drive voltages, and a low gate charge, reducing the power loss during switching. It's housed in a compact package suitable for surface-mount technology (SMT), making it ideal for modern electronics where space is at a premium.
The transistor also has a robust design to handle high currents and voltages, making it suitable for demanding applications. Its performance characteristics are optimized for reducing power loss and enhancing the overall efficiency of electronic circuits. It’s a versatile component widely adopted in various industries for its reliability and efficiency in power-related applications.
Key features include a low threshold voltage, which allows for efficient operation at lower gate drive voltages, and a low gate charge, reducing the power loss during switching. It's housed in a compact package suitable for surface-mount technology (SMT), making it ideal for modern electronics where space is at a premium.
The transistor also has a robust design to handle high currents and voltages, making it suitable for demanding applications. Its performance characteristics are optimized for reducing power loss and enhancing the overall efficiency of electronic circuits. It’s a versatile component widely adopted in various industries for its reliability and efficiency in power-related applications.
Equivalent
The SI4850EY-T1-E3 is a P-channel MOSFET. Equivalent products may include:
1. FDS6679 by ON Semiconductor
2. IRF4905 by Infineon Technologies
3. AO4409 by Alpha & Omega Semiconductor
Always verify the specifications like voltage, current ratings, and package type before substituting to ensure compatibility with your application.
1. FDS6679 by ON Semiconductor
2. IRF4905 by Infineon Technologies
3. AO4409 by Alpha & Omega Semiconductor
Always verify the specifications like voltage, current ratings, and package type before substituting to ensure compatibility with your application.
Features
The SI4850EY-T1-E3 is a device from Vishay Siliconix, known for its semiconductor solutions. Here are some key features:
1. N-Channel MOSFET: This device is an N-channel MOSFET, designed for high-efficiency power switching applications.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) up to 12A.
3. R_DS(on): It offers a low on-resistance, which minimizes power loss and improves efficiency.
4. Package Type: It comes in a standard Siliconix package, often compatible with surface mount technology, facilitating integration into compact circuit designs.
5. Applications: This MOSFET is suitable for use in various applications including DC/DC converters, load switches, and power management in consumer electronics.
6. Thermal Performance: It features good thermal performance to support high operating temperatures without degrading performance.
These features make the SI4850EY-T1-E3 a versatile choice for designers looking to implement efficient power management and switching in compact electronic devices.
1. N-Channel MOSFET: This device is an N-channel MOSFET, designed for high-efficiency power switching applications.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) up to 12A.
3. R_DS(on): It offers a low on-resistance, which minimizes power loss and improves efficiency.
4. Package Type: It comes in a standard Siliconix package, often compatible with surface mount technology, facilitating integration into compact circuit designs.
5. Applications: This MOSFET is suitable for use in various applications including DC/DC converters, load switches, and power management in consumer electronics.
6. Thermal Performance: It features good thermal performance to support high operating temperatures without degrading performance.
These features make the SI4850EY-T1-E3 a versatile choice for designers looking to implement efficient power management and switching in compact electronic devices.
Pinout
The SI4850EY-T1-E3 is a P-channel MOSFET from Vishay Siliconix. It typically comes in an SO-8 package, which is an 8-pin surface-mount configuration. Here is a concise overview of its pin functions:
1. Drain (D1, D2, D3, D4): Pins 1, 2, 3, and 4 are typically connected internally and serve as the drain for the MOSFET. This is where the load is connected.
2. Source (S1, S2, S3, S4): Pins 5, 6, and 7 are often designated as the source terminals. These are connected together internally for the source path of the MOSFET.
3. Gate (G): Pin 8 is the gate terminal, which is used to control the on and off states of the MOSFET. Applying the appropriate voltage at this pin allows the MOSFET to conduct.
In summary, the SI4850EY-T1-E3 consists of 8 pins with 4 used for the drain, 3 for the source, and 1 for the gate, typical of a P-channel MOSFET configuration.
1. Drain (D1, D2, D3, D4): Pins 1, 2, 3, and 4 are typically connected internally and serve as the drain for the MOSFET. This is where the load is connected.
2. Source (S1, S2, S3, S4): Pins 5, 6, and 7 are often designated as the source terminals. These are connected together internally for the source path of the MOSFET.
3. Gate (G): Pin 8 is the gate terminal, which is used to control the on and off states of the MOSFET. Applying the appropriate voltage at this pin allows the MOSFET to conduct.
In summary, the SI4850EY-T1-E3 consists of 8 pins with 4 used for the drain, 3 for the source, and 1 for the gate, typical of a P-channel MOSFET configuration.
Manufacturer
The SI4850EY-T1-E3 is manufactured by Vishay Siliconix, a division of Vishay Intertechnology, Inc. Vishay is a global company known for manufacturing discrete semiconductors and passive electronic components. The company produces a wide range of products, including transistors, diodes, optoelectronics, capacitors, resistors, and inductors. Vishay's components are used in a variety of industries, including automotive, industrial, computing, telecommunications, consumer electronics, and military/aerospace. As a well-established player in the electronics industry, Vishay is known for its innovation, quality, and extensive product portfolio.
Application
The SI4850EY-T1-E3 is a MOSFET commonly used in various applications due to its efficient switching performance. Key application areas include power management systems, DC-DC converters, and load switching solutions. It's also used in battery-operated devices, automotive electronics, and industrial power supply circuits. Its low on-resistance and fast switching capabilities make it suitable for applications requiring high efficiency and low power loss. The component is also appropriate for use in LED lighting systems and motor control circuits, where precise power regulation and control are essential.
Package
The SI4850EY-T1-E3 is a PowerPAK SO-8 package. It's a surface-mount package known for its low thermal resistance and compact size, making it suitable for high-efficiency power management applications.
