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SI4943CDY-T1-GE3
+StücklisteMOSFET 2P-CH 20V 8A 8-SOIC
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HerstellerVishay Siliconix
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Herstellerteil #SI4943CDY-T1-GE3
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Paket SOIC-8
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Auf Lager5754
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 19.2mOhm @ 8.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1945pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Features
- N-channel enhancement-mode MOSFET
- VDS around 30 V (DC)
- Very low RDS(on): a few milliohms (typical) at VGS = 10 V; still low at 4.5 V
- High current capability (several amps, depending on package)
- Logic-level gate drive (low VGS threshold)
- Fast switching with low gate charge
- Suitable for DC-DC converters, high/low-side switches, load switching
- RoHS compliant; wide operating temp range (roughly -55°C to +150°C)
- Surface-mount packaging (options in literature include SO-8/D2PAK variants)
Note: exact RDS(on), ID, and package can vary by revision and packaging. Refer to the official datasheet for precise electrical specs, packaging, and thermal details.
Pinout
1 = G1, 2 = D1, 3 = S1, 4 = S2, 5 = D2, 6 = G2.
(Also check the manufacturer datasheet for package-specific pin assignment and any exposed pad details.)