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SI5511DC-T1-GE3
+StücklisteMOSFET N/P-CH 30V 4A 1206-8
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HerstellerVishay Siliconix
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Herstellerteil #SI5511DC-T1-GE3
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Datenblatt SI5511DC-T1-GE3 DataSheet
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Paket 8-SMD, Flat Lead
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Auf Lager2960
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 4A, 3.6A |
| Rds On(Max) @ Id Vgs | 55mOhm @ 4.8A, 4.5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.1nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 435pF @ 15V |
| Power - Max | 3.1W, 2.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
