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SI5517DU-T1-E3
+StücklisteMOSFET N/P-CH 20V 6A CHIPFET
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HerstellerVishay Siliconix
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Herstellerteil #SI5517DU-T1-E3
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Datenblatt SI5517DU-T1-E3 DataSheet
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Paket PowerPAK® ChipFET™ Dual
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Auf Lager7858
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 6A |
| RdsOn(Max)@IdVgs | 39mOhm @ 4.4A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16nC @ 8V |
| InputCapacitance(Ciss)(Max)@Vds | 520pF @ 10V |
| Power-Max | 8.3W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® ChipFET™ Dual |
