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SI5517DU-T1-E3
+StücklisteMOSFET N/P-CH 20V 6A CHIPFET
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HerstellerVishay Siliconix
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Herstellerteil #SI5517DU-T1-E3
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Datenblatt SI5517DU-T1-E3 DataSheet
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Paket PowerPAK® ChipFET™ Dual
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Auf Lager7858
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6A |
| Rds On(Max) @ Id Vgs | 39mOhm @ 4.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16nC @ 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 10V |
| Power - Max | 8.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
