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SI5999EDU-T1-GE3
+StücklisteMOSFET 2P-CH 20V 6A POWERPAK
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HerstellerVishay Siliconix
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Herstellerteil #SI5999EDU-T1-GE3
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Datenblatt SI5999EDU-T1-GE3 DataSheet
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Paket PowerPAK® ChipFET™ Dual
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Auf Lager8473
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6A |
| Rds On(Max) @ Id Vgs | 59mOhm @ 3.5A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 496pF @ 10V |
| Power - Max | 10.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
