Abbildungen dienen nur als Referenz
SI7139DP-T1-GE3
+StücklisteMOSFET P-CH 30V 40A PPAK SO-8
-
HerstellerVishay Siliconix
-
Herstellerteil #SI7139DP-T1-GE3
-
Datenblatt SI7139DP-T1-GE3 DataSheet
-
Auf Lager22671
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 146 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4230 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The SI7139DP-T1-GE3 is a power MOSFET designed for efficient power management applications. It is typically used in situations that require high-speed switching and low on-resistance. Key features of this MOSFET include its N-channel configuration, which is ideal for load switching and battery protection in portable devices. The device is housed in a compact SO-8 package, which is beneficial for space-constrained applications.
The SI7139DP-T1-GE3 boasts a low on-resistance (R_DS(on)), which minimizes power loss and improves overall efficiency in electronic circuits. It also supports high current handling capabilities, making it suitable for various power conversion and management tasks. Additionally, its design includes enhanced thermal performance to ensure reliable operation under different environmental conditions.
This MOSFET is often chosen for its ruggedness, efficiency, and ability to contribute to the compact design of devices. Its reliability and performance make it a popular choice in consumer electronics, telecommunications, and computing applications. Overall, the SI7139DP-T1-GE3 is a versatile component for modern electronic applications that demand robust power management solutions.
The SI7139DP-T1-GE3 boasts a low on-resistance (R_DS(on)), which minimizes power loss and improves overall efficiency in electronic circuits. It also supports high current handling capabilities, making it suitable for various power conversion and management tasks. Additionally, its design includes enhanced thermal performance to ensure reliable operation under different environmental conditions.
This MOSFET is often chosen for its ruggedness, efficiency, and ability to contribute to the compact design of devices. Its reliability and performance make it a popular choice in consumer electronics, telecommunications, and computing applications. Overall, the SI7139DP-T1-GE3 is a versatile component for modern electronic applications that demand robust power management solutions.
Equivalent
The SI7139DP-T1-GE3 is a N-channel MOSFET produced by Vishay. Equivalent products can include similar specifications from other manufacturers such as:
1. Infineon BSC080N03LS - Offers similar voltage and current ratings.
2. ON Semiconductor NTD5867NL - A comparable N-channel MOSFET.
3. STMicroelectronics STL140N3LLH6 - Another close equivalent in terms of specifications.
Always compare datasheets to ensure full compatibility for your specific application needs.
1. Infineon BSC080N03LS - Offers similar voltage and current ratings.
2. ON Semiconductor NTD5867NL - A comparable N-channel MOSFET.
3. STMicroelectronics STL140N3LLH6 - Another close equivalent in terms of specifications.
Always compare datasheets to ensure full compatibility for your specific application needs.
Features
The SI7139DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-to-source voltage (V_DS) of up to 30V and can handle a continuous drain current (I_D) of approximately 30A, making it suitable for medium power applications.
2. Low On-Resistance: It offers a low on-state resistance (R_DS(on)) which minimizes power losses and improves efficiency, especially in switching applications.
3. Package Type: It is housed in a PowerPAK SO-8 package, which offers good thermal performance and is suitable for surface-mount technology (SMT), optimizing space on the PCB.
4. Thermal Performance: The design supports efficient heat dissipation, which enhances reliability and performance in high-temperature environments.
5. Applications: Commonly used in DC-DC converters, power management, load switching, and motor drives, among other electronic applications.
These features make the SI7139DP-T1-GE3 a versatile component for various power electronics projects.
1. Voltage and Current Ratings: It typically supports a drain-to-source voltage (V_DS) of up to 30V and can handle a continuous drain current (I_D) of approximately 30A, making it suitable for medium power applications.
2. Low On-Resistance: It offers a low on-state resistance (R_DS(on)) which minimizes power losses and improves efficiency, especially in switching applications.
3. Package Type: It is housed in a PowerPAK SO-8 package, which offers good thermal performance and is suitable for surface-mount technology (SMT), optimizing space on the PCB.
4. Thermal Performance: The design supports efficient heat dissipation, which enhances reliability and performance in high-temperature environments.
5. Applications: Commonly used in DC-DC converters, power management, load switching, and motor drives, among other electronic applications.
These features make the SI7139DP-T1-GE3 a versatile component for various power electronics projects.
Pinout
The SI7139DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It comes in a PowerPAK SO-8 package, which typically features an 8-pin configuration. However, not all pins may be used for different functions in this MOSFET, and some pins might be internally connected or designated for thermal and electrical performance.
This component is designed primarily for low-voltage applications and is often used in synchronous rectification, DC-DC converters, and load switching applications. It operates with a low on-resistance to ensure efficient power handling and minimal energy loss. Key functions of the SI7139DP-T1-GE3 include switching and amplifying electronic signals in various circuits, particularly those requiring efficient power management.
For detailed pin configuration and specific electrical characteristics, refer to the manufacturer's datasheet, which provides comprehensive information on pin assignments, electrical specifications, and recommended usage scenarios.
This component is designed primarily for low-voltage applications and is often used in synchronous rectification, DC-DC converters, and load switching applications. It operates with a low on-resistance to ensure efficient power handling and minimal energy loss. Key functions of the SI7139DP-T1-GE3 include switching and amplifying electronic signals in various circuits, particularly those requiring efficient power management.
For detailed pin configuration and specific electrical characteristics, refer to the manufacturer's datasheet, which provides comprehensive information on pin assignments, electrical specifications, and recommended usage scenarios.
Manufacturer
The SI7139DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing a wide range of electronic components. These components include semiconductors, passive components such as resistors, capacitors, inductors, and diodes, as well as other specialized electronic devices. Vishay serves several industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company is recognized for its innovation and quality in producing components that are critical in the functioning of electronic circuits and systems.
Application
The SI7139DP-T1-GE3 is a power MOSFET primarily used in applications requiring efficient power management and switching. Its key application areas include:
1. DC-DC Converters: Used in voltage regulation for improving power efficiency in electronic devices.
2. Motor Control: Suitable for controlling motors in industrial and automotive applications.
3. Load Switches: Utilized in power management to control the distribution of power in various circuits.
4. Power Supplies: Helps in the efficient conversion and regulation of power in switched-mode power supplies.
5. Battery Management Systems: Supports efficient charging and discharging processes in battery-operated devices.
These capabilities make it a versatile component for various high-efficiency power management tasks.
1. DC-DC Converters: Used in voltage regulation for improving power efficiency in electronic devices.
2. Motor Control: Suitable for controlling motors in industrial and automotive applications.
3. Load Switches: Utilized in power management to control the distribution of power in various circuits.
4. Power Supplies: Helps in the efficient conversion and regulation of power in switched-mode power supplies.
5. Battery Management Systems: Supports efficient charging and discharging processes in battery-operated devices.
These capabilities make it a versatile component for various high-efficiency power management tasks.
Package
The SI7139DP-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in the PowerPAK® SO-8 type. This package is designed for efficient thermal performance and compact size, suitable for high-density applications.
