Abbildungen dienen nur als Referenz
SI7148DP-T1-E3
+StücklisteMOSFET N-CH 75V 28A PPAK SO-8
-
HerstellerVishay Siliconix
-
Herstellerteil #SI7148DP-T1-E3
-
Auf Lager5145
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 35 V |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7148 |
Übersicht
Description
Additionally, the SI7148DP-T1-E3 incorporates fast switching capabilities, which help improve the efficiency of high-frequency applications. Its compact surface-mount package (DPAK) allows for space-efficient designs, while its rugged construction ensures reliability under various thermal and electrical stresses.
Overall, this MOSFET is ideal for engineers looking to optimize power efficiency and thermal management in their electronic designs.
Equivalent
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 50A, allowing for robust performance in power circuits.
3. Low On-resistance: It boasts a low R_DS(on) typically around 4.0 mΩ, which minimizes power losses and improves efficiency.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It features a low thermal resistance, ensuring effective heat dissipation.
6. Package: Available in a compact DPAK (TO-252) package, which is suitable for surface-mount applications.
7. Applications: Commonly used in power supplies, motor drives, and other power management systems.
These features make the SI7148DP-T1-E3 suitable for a wide range of electronic applications requiring efficient power control.
Pinout
1. Gate (G): Pin for controlling the MOSFET; applies the voltage to turn the device on or off.
2. Drain (D): Pin where the current exits the MOSFET when it is in the on state.
3. Source (S): Pin where the current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Body Diode: Internal structure that allows current to flow in the reverse direction, providing protection against reverse polarity.
This MOSFET is commonly used for power management and switching applications, offering low on-resistance and fast switching capabilities.