SI7157DP-T1-GE3

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SI7157DP-T1-GE3

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MOSFET P-CH 20V 60A PPAK SO-8

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 1.6mOhm @ 25A, 10V
Vgs(th)(Max)@Id 1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 625 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 22000 pF @ 10 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Übersicht

Description

The SI7157DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The SI7157DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).

Package

The SI7157DP-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low thermal resistance and efficient heat dissipation, making it suitable for power management in space-constrained designs. The package dimensions are typically 4.9mm x 3.9mm x 1.75mm.

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