SI7252DP-T1-GE3

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SI7252DP-T1-GE3

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MOSFET 2N-CH 100V 36.7A PPAK 8SO

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain(Id) @ 25°C 36.7A
Rds On(Max) @ Id Vgs 18mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 3.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1170pF @ 50V
Power - Max 46W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The SI7252DP-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, motor control, and load switching.
Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
Applications:
- Synchronous rectification
- Battery protection circuits
- Power supplies (POL converters)
Advantages:
- High current handling in a small footprint
- Low conduction losses for improved efficiency
- Robust thermal performance
This MOSFET is ideal for space-constrained, high-power designs requiring reliability and performance. For detailed specs, refer to the datasheet.

Features

The SI7252DP-T1-GE3 is a N-channel MOSFET by Vishay with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Gate Charge (Qg): 44nC (typical) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
- Operating Temperature: -55°C to +175°C
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.

Pinout

The SI7252DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Functions:
- Pins 1, 2, 3 (Source 1, Gate 1, Drain 1): First MOSFET channel.
- Pins 6, 7, 8 (Drain 2, Gate 2, Source 2): Second MOSFET channel.
- Pins 4 & 5: Typically connected to the drain (internally tied for thermal/electrical performance).
Key Features:
- 30V drain-source voltage (VDS).
- Low on-resistance (RDS(on)).
- Optimized for power management in DC-DC converters, load switches, etc.
For exact pinout, refer to the datasheet.

Manufacturer

The SI7252DP-T1-GE3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay specializes in producing high-performance discrete semiconductors (diodes, MOSFETs, optoelectronics) and passive components (resistors, capacitors, inductors). Known for innovation and reliability, Vishay serves industries like automotive, industrial, computing, and consumer electronics.
The SI7252DP-T1-GE3 is a N-channel MOSFET designed for power management applications, offering low on-resistance and high efficiency.

Package

The SI7252DP-T1-GE3 is a PowerPAK® SO-8 package, designed for high-power applications. It features a compact, surface-mount design with enhanced thermal performance, making it suitable for efficient power management in space-constrained environments. The package ensures reliable operation with low on-resistance and high current handling.

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