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SI7315DN-T1-GE3
+StücklisteMOSFET P-CH 150V 8.9A PPAK1212-8
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HerstellerVishay Siliconix
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Herstellerteil #SI7315DN-T1-GE3
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Datenblatt SI7315DN-T1-GE3 DataSheet
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Auf Lager3013
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 315mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 75 V |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Base Product Number | SI7315 |
Übersicht
Description
The SI7315DN-T1-GE3 is a high-speed, low RON (on-resistance) N-channel MOSFET designed for efficient power management applications. It features a maximum RON of 5.5 mΩ at a VGS of 10 V, allowing for minimal conduction losses. This device is optimized for high-frequency operation, making it suitable for applications such as DC-DC converters, load switches, and power distribution.
With a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of up to 60 A, the SI7315DN-T1-GE3 can handle demanding power requirements. Its compact surface mount package (SO-8) facilitates easy integration into various circuit designs, while its fast switching capabilities enable efficient operation in high-performance applications. The device is also characterized by its low gate charge, which contributes to reduced switching losses and improved overall efficiency.
Overall, the SI7315DN-T1-GE3 is a versatile and reliable choice for engineers seeking high-performance MOSFET solutions in modern electronic designs.
With a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of up to 60 A, the SI7315DN-T1-GE3 can handle demanding power requirements. Its compact surface mount package (SO-8) facilitates easy integration into various circuit designs, while its fast switching capabilities enable efficient operation in high-performance applications. The device is also characterized by its low gate charge, which contributes to reduced switching losses and improved overall efficiency.
Overall, the SI7315DN-T1-GE3 is a versatile and reliable choice for engineers seeking high-performance MOSFET solutions in modern electronic designs.
Equivalent
The SI7315DN-T1-GE3 is an N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and STP16NF06. When looking for alternatives, consider specifications such as voltage rating, current rating, Rds(on), and package type to ensure compatibility in your application. Always validate the specific requirements of your circuit before substituting components.
Features
The SI7315DN-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Low On-Resistance (RDS(on)): Provides improved efficiency by minimizing power loss.
2. High Voltage Rating: Typically supports up to 30V, making it suitable for various power applications.
3. High Current Capacity: Can handle significant load currents, enhancing performance in demanding environments.
4. Fast Switching Speed: Facilitates quick turn-on and turn-off, ideal for high-frequency applications.
5. Thermal Stability: Features good thermal performance, allowing operation in harsh conditions.
6. Enhanced Gate Charge (Qg): Optimized for reduced gate drive power requirements.
7. Surface Mount Package: Available in a compact SO-8 package, which saves space on PCBs.
These attributes make the SI7315DN-T1-GE3 suitable for applications in power supplies, motor drivers, and other electronic systems requiring efficient switching and power management.
1. Low On-Resistance (RDS(on)): Provides improved efficiency by minimizing power loss.
2. High Voltage Rating: Typically supports up to 30V, making it suitable for various power applications.
3. High Current Capacity: Can handle significant load currents, enhancing performance in demanding environments.
4. Fast Switching Speed: Facilitates quick turn-on and turn-off, ideal for high-frequency applications.
5. Thermal Stability: Features good thermal performance, allowing operation in harsh conditions.
6. Enhanced Gate Charge (Qg): Optimized for reduced gate drive power requirements.
7. Surface Mount Package: Available in a compact SO-8 package, which saves space on PCBs.
These attributes make the SI7315DN-T1-GE3 suitable for applications in power supplies, motor drivers, and other electronic systems requiring efficient switching and power management.
Pinout
The SI7315DN-T1-GE3 is a N-channel MOSFET with a pin count of 8. It is designed for applications such as power management and switching. The primary functions of its pins are as follows:
1. Gate (G): Controls the MOSFET's operation (turning it on or off).
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal through which current flows into the MOSFET.
The specific pin configuration can typically be found in the datasheet, which provides detailed information on characteristics, ratings, and additional functionality. This component is often utilized in high-efficiency power circuits due to its low on-resistance and fast switching capabilities.
1. Gate (G): Controls the MOSFET's operation (turning it on or off).
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal through which current flows into the MOSFET.
The specific pin configuration can typically be found in the datasheet, which provides detailed information on characteristics, ratings, and additional functionality. This component is often utilized in high-efficiency power circuits due to its low on-resistance and fast switching capabilities.
Manufacturer
The SI7315DN-T1-GE3 is manufactured by Silicon Labs, also known as Silicon Laboratories Inc. This company is a prominent player in the semiconductor industry, specializing in high-performance analog, mixed-signal, and digital signal processing (DSP) solutions. Silicon Labs is known for its innovative products that cater to various applications, including Internet of Things (IoT), automotive, industrial, and consumer electronics.
Founded in 1996 and headquartered in Austin, Texas, Silicon Labs has established itself as a leader in the design and production of microcontrollers, sensors, timing devices, and wireless connectivity solutions. Their products are recognized for their efficiency, reliability, and integration capabilities, making them suitable for a wide range of technological applications.
The SI7315DN-T1-GE3 itself is a high-speed, low-voltage gate driver, typically used in power management and motor control applications. Silicon Labs focuses on driving advancements in technology by continually innovating and providing solutions that meet the evolving demands of the electronics industry.
Founded in 1996 and headquartered in Austin, Texas, Silicon Labs has established itself as a leader in the design and production of microcontrollers, sensors, timing devices, and wireless connectivity solutions. Their products are recognized for their efficiency, reliability, and integration capabilities, making them suitable for a wide range of technological applications.
The SI7315DN-T1-GE3 itself is a high-speed, low-voltage gate driver, typically used in power management and motor control applications. Silicon Labs focuses on driving advancements in technology by continually innovating and providing solutions that meet the evolving demands of the electronics industry.
Application
The SI7315DN-T1-GE3 is a N-channel MOSFET designed for power management applications. Its primary application areas include:
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Motor Control: Employed in brushless DC motors and industrial automation.
3. Battery Management Systems: Utilized for efficient switching in battery charging and protection.
4. Load Switching: Acts as a switch for various electronic loads.
5. LED Drivers: Used in driving LED arrays efficiently.
Its low on-resistance and fast switching capabilities make it ideal for these applications.
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Motor Control: Employed in brushless DC motors and industrial automation.
3. Battery Management Systems: Utilized for efficient switching in battery charging and protection.
4. Load Switching: Acts as a switch for various electronic loads.
5. LED Drivers: Used in driving LED arrays efficiently.
Its low on-resistance and fast switching capabilities make it ideal for these applications.
Package
The SI7315DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package is typically used for integrated circuits, providing a compact design for efficient integration into electronic circuits.
