SI7431DP-T1-GE3

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SI7431DP-T1-GE3

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MOSFET P-CH 200V 2.2A PPAK SO-8

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Spezifikationen

Attribut Wert
Series TrenchFET®
Part Status Active
Base Product Number SI7431
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 174mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package PowerPAK® SO-8
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The SI7431DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in applications like load switching, battery protection, and DC-DC conversion. Key features include:
- Voltage Rating: -30V (drain-to-source)
- Current Handling: -11A (continuous drain current)
- Low On-Resistance (RDS(on)): 19mΩ (max at VGS = -10V)
- Gate Threshold: -1V to -3V (enhancement-mode)
- Package: PowerPAK® SO-8 (compact, surface-mount)
It offers high efficiency, low power loss, and fast switching, making it suitable for portable electronics, power supplies, and automotive systems. The T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
For detailed specs, refer to the datasheet or Vishay’s product page.

Equivalent

Equivalent products to the SI7431DP-T1-GE3 (Vishay P-channel MOSFET) include:
- IRLML6401TRPBF (Infineon)
- AO3401A (Alpha & Omega)
- FDC5612P (Fairchild/ON Semi)
- DMG2305UX (Diodes Inc.)
These alternatives offer similar specs (e.g., -30V, -4.3A, low RDS(on)). Verify pinout and parameters for compatibility.

Features

The SI7431DP-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -12A (Continuous Drain Current, ID)
- Low On-Resistance: 25mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Power Dissipation: 3.1W
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC converters
This MOSFET is optimized for high efficiency and low power loss in space-constrained designs.

Pinout

The SI7431DP-T1-GE3 is a PowerTrench® MOSFET from Vishay.
- Pin Count: 8 pins (PowerPAK® SO-8 package).
- Function:
- N-channel MOSFET designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Key specs: 30V drain-source voltage (VDS), 100A continuous drain current (ID), low on-resistance (RDS(on) ~1.8mΩ max).
- Pins: Typically, 1-3 = Drain (D), 4 = Gate (G), 5-8 = Source (S) (check datasheet for exact layout).
For precise pinout, refer to the datasheet.

Application

The SI7431DP-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment.
4. Consumer Electronics – Power distribution in smartphones, tablets, and laptops.
5. Industrial Applications – Motor control and power supply circuits.
Its low on-resistance and high efficiency make it ideal for compact, energy-efficient designs.

Package

The SI7431DP-T1-GE3 is a PowerPAK® SO-8 package, which is a surface-mount (SMD) type. It features a compact design with 8 pins, optimized for high-power applications. The package ensures efficient thermal performance and is commonly used in power management circuits.

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