SI7450DP-T1-E3

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SI7450DP-T1-E3

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MOSFET N-CH 200V 3.2A PPAK SO-8

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 3.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 80mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 42 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.9W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Übersicht

Description

The SI7450DP-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V
- Current Rating: -13A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Compact Package: PowerPAK® SO-8 (optimized for space-constrained designs)
Ideal for load switching, DC-DC conversion, and battery management in portable electronics, automotive systems, and industrial applications. Its low RDS(on) ensures high efficiency, while the SO-8 package enhances thermal performance.
For detailed specs, refer to the datasheet or Vishay’s product page.

Equivalent

Equivalent products to the SI7450DP-T1-E3 (P-channel MOSFET, 40V, 12A) include:
- IRF9Z34N (P-channel, 55V, 12A)
- FQP27P06 (P-channel, 60V, 27A)
- IRLML6401 (P-channel, 12V, 4A, SOT-23)
- AO3401 (P-channel, 30V, 4.1A, SOT-23)
Check datasheets for exact specs.

Features

The SI7450DP-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-to-Source, VDSS)
- Current Rating: -10A (Continuous Drain Current, ID)
- Low On-Resistance: 28mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Fast Switching: Low gate charge (Qg) and capacitance for efficient performance
- Power Dissipation: 3.1W (TA = 25°C)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power management, load switching, DC-DC converters
Compact, efficient, and suitable for high-performance power control.

Pinout

The SI7450DP-T1-E3 is a P-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though typically only 4 are functional; others may be NC or thermal pads).
- Key Functions:
- Source (S), Gate (G), Drain (D): Standard MOSFET terminals.
- Low RDS(on): ~10mΩ (max) at VGS = -10V for efficient power switching.
- High Current Handling: Up to ~40A (pulsed).
- Voltage Rating: -30V (VDSS).
Commonly used in power management, load switching, and DC-DC converters. Check the datasheet for exact pinout and thermal pad details.

Application

The SI7450DP-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Motor Control – Driving small motors in automotive and industrial systems.
4. Load Switching – Efficient power distribution in consumer electronics (e.g., smartphones, laptops).
5. Automotive Applications – ECU power control, LED drivers, and infotainment systems.
Its low on-resistance and high efficiency make it ideal for compact, energy-sensitive designs.

Package

The SI7450DP-T1-E3 is a P-Channel MOSFET housed in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The package type ensures high power density and reliability in a small footprint.

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