SI7615ADN-T1-GE3

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SI7615ADN-T1-GE3

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MOSFET P-CH 20V 35A PPAK1212-8

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Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 4.4mOhm @ 20A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 183 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 5590 pF @ 10 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Übersicht

Description

The SI7615ADN-T1-GE3 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. This component is designed for efficient switching and amplification in electronic circuits, commonly used in applications such as power management, automotive, and industrial systems.
Key features of the SI7615ADN-T1-GE3 include:
- N-Channel MOSFET: It is an N-channel enhancement mode transistor, enabling it to handle high current and voltage levels with low on-resistance.
- Low On-Resistance: Offers low RDS(on), which minimizes power loss and enhances efficiency.
- Compact Design: Packaged in a PowerPAK SO-8, allowing for space-efficient designs in compact applications.
- High-Switching Speed: Designed to switch on and off rapidly, which is crucial for high-speed applications.
- Thermal Management: Features good thermal performance, making it suitable for high-power applications.
Overall, the SI7615ADN-T1-GE3 is ideal for applications requiring reliable and efficient power handling with minimal footprint.

Equivalent

The SI7615ADN-T1-GE3 is an N-channel MOSFET manufactured by Vishay. Equivalent products from other manufacturers may include:
1. Infineon: BSC018N04LS
2. ON Semiconductor: NTMFS4935NFL
3. STMicroelectronics: STB100NF04
4. Texas Instruments: CSD18535KCS
When selecting equivalents, ensure to compare critical specifications such as voltage rating, current, Rds(on), and package type. Always verify the datasheets to ensure compatibility with your application.

Features

The SI7615ADN-T1-GE3 is a power MOSFET designed for efficient power management and switching applications. Key features include:
1. N-Channel MOSFET: It utilizes an N-channel configuration, offering efficient current conduction.
2. Low On-Resistance: The device features low R_DS(on) values, ensuring minimal power loss and enhanced efficiency.
3. High-Speed Switching: Optimized for fast switching speeds, suitable for high-frequency applications.
4. Compact Package: Available in a small, surface-mount package (PowerPAK® SO-8), facilitating space-saving designs.
5. Thermal Performance: Designed with excellent thermal characteristics, it ensures reliable performance under varying thermal conditions.
6. Wide Voltage Range: Supports a broad range of voltages, making it versatile for different power levels and applications.
7. Rugged Design: Built to withstand high-energy pulses and adverse operating conditions.
8. Applications: Ideal for use in DC-DC converters, power management systems, motor drives, and other electronic circuits requiring efficient power switching.
Overall, the SI7615ADN-T1-GE3 serves as a robust and efficient component in power electronic systems.

Pinout

The SI7615ADN-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is a part of the TrenchFET family, which is known for its low ON-resistance and high efficiency in power management applications. This particular MOSFET comes in an SO-8 package, which is a small-outline package with 8 pins.
Pin Count:
- 8 pins
Function:
- The SI7615ADN-T1-GE3 is designed for use in DC-DC converters, load switches, power management, and other applications requiring efficient power handling. It features a low ON-resistance and high-speed switching capabilities, which enable efficient power delivery and minimal energy loss. The MOSFET can handle a maximum drain-source voltage (V_DS) and is typically used to switch electronic signals or power in various types of circuits.

Manufacturer

The SI7615ADN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, USA, Vishay provides components essential for innovative products in various applications, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. The company is known for its broad portfolio of components that include resistors, inductors, capacitors, diodes, MOSFETs, optoelectronics, and more, contributing to the development and reliability of electronic systems worldwide.

Application

The SI7615ADN-T1-GE3 is a N-channel MOSFET commonly used in applications requiring efficient power management and switching. Its primary application areas include:
1. Power Supply Units: Used for DC-DC converters and switch-mode power supplies due to its high efficiency and fast switching capabilities.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Battery Management Systems: Helps in charging and discharging control in battery-operated devices.
4. Load Switching: Used in various consumer electronics for enabling and disabling power to certain components.
5. LED Lighting: Assists in the control and dimming of high-power LED arrays.

Package

The SI7615ADN-T1-GE3 is a PowerPAK SO-8 package type. This package is designed to offer enhanced thermal and electrical performance, suitable for surface-mount applications in power management and switching.

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