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SI7911DN-T1-GE3
+StücklisteMOSFET 2P-CH 20V 4.2A 1212-8
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HerstellerVishay Siliconix
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Herstellerteil #SI7911DN-T1-GE3
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Paket PowerPAK® 1212-8 Dual
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Auf Lager7807
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 4.2A |
| Rds On(Max) @ Id Vgs | 51mOhm @ 5.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 4.5V |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
