Abbildungen dienen nur als Referenz
SI7960DP-T1-E3
+StücklisteMOSFET 2N-CH 60V 6.2A PPAK SO-8
-
HerstellerVishay Siliconix
-
Herstellerteil #SI7960DP-T1-E3
-
Paket PowerPAK® SO-8 Dual
-
Auf Lager6575
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 6.2A |
| RdsOn(Max)@IdVgs | 21mOhm @ 9.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 75nC @ 10V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
