SI8238AB-D-IS1R

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SI8238AB-D-IS1R

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DGTL ISO 2.5KV 2CH GT DVR 16SOIC

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Spezifikationen

Attribut Wert
Part Status Active
Technology Capacitive Coupling
Number of Channels 2
Voltage - Isolation 2500Vrms
Common Mode Transient Immunity (Min) 20kV/µs
Propagation Delay tp LH / tp HL (Max) 60ns, 60ns
Pulse Width Distortion (Max) 5.6ns
Rise / Fall Time (Typ) 12ns, 12ns (Max)
Current - Output High, Low 2A, 4A
Current - Peak Output 4A
Voltage - Output Supply 6.5V ~ 24V
Grade Automotive
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC
Approval Agency CQC, CSA, UR, VDE
Base Product Number SI8238
Qualification AEC-Q100

Übersicht

Description

The SI8238AB-D-IS1R is a dual isolated gate driver produced by Silicon Labs, designed to enhance the performance of switching devices like MOSFETs and IGBTs. This device provides robust isolation, typically up to 2.5 kV, and is used in applications requiring high-voltage isolation between control and power stages. The SI8238AB-D-IS1R offers fast, efficient switching with its high drive strength, low propagation delay, and low power consumption. It features a wide supply voltage range and is equipped with integrated safety features such as under-voltage lockout (UVLO) and thermal shutdown, enhancing system reliability. Designed for industrial, automotive, and renewable energy applications, the gate driver is housed in a compact SOIC package, facilitating easy integration into various designs. Its ability to operate over a wide temperature range and provide strong electromagnetic interference (EMI) immunity makes it suitable for demanding operating environments. The SI8238AB-D-IS1R supports better thermal performance and long-term durability, making it a suitable choice for high-efficiency and high-reliability power systems.

Equivalent

The SI8238AB-D-IS1R is an isolated gate driver. Equivalent products include the Texas Instruments UCC21520, the Infineon 1ED020I12-F2, and the Analog Devices ADuM4135. These alternatives offer similar functionalities, such as high-speed, robust isolation, and support for MOSFET and IGBT driving applications. When selecting equivalents, consider pin compatibility, isolation voltage, and specific application requirements.

Features

The SI8238AB-D-IS1R is an isolated gate driver designed for high-performance applications. Key features include:
1. Isolation Technology: Utilizes Silicon Labs' robust isolation technology providing high noise immunity and operational reliability.
2. Output Channels: Offers two independent, isolated output channels, enhancing flexibility in various applications.
3. Drive Strength: Capable of delivering up to 4 A peak drive current, suitable for driving power MOSFETs and IGBTs.
4. Switching Speed: Features fast propagation delays and precise timing characteristics, enabling high-frequency operation.
5. Protection Features: Includes under-voltage lockout (UVLO) and thermal shutdown, protecting the device under fault conditions.
6. Wide Temperature Range: Operates over an extended temperature range, typically from -40°C to +125°C, making it suitable for industrial environments.
7. Package: Available in compact SOIC-16 packaging, optimizing board space.
These features make the SI8238AB-D-IS1R an ideal choice for applications requiring reliable isolation and efficient power delivery, such as motor drives, power converters, and renewable energy systems.

Pinout

The SI8238AB-D-IS1R is an isolated gate driver typically used for driving power transistors such as IGBTs and MOSFETs. This device is part of the Silicon Labs Si823x family of isolated gate drivers. It comes in an 8-pin narrow-body SOIC (Small Outline Integrated Circuit) package.
Here is a brief overview of its pin count and key functions:
- Pin Count: 8 pins
- Key Functions:
- VDDI (Input Side Supply Voltage): Power supply input for the primary side.
- VDDA/B (Output Side Supply Voltage): Power supply inputs for the isolated secondary sides A and B.
- GNDI (Ground for Input Side): Ground connection for the primary side.
- GNDA/B (Ground for Output Side): Ground connections for the isolated secondary sides A and B.
- INA/B (Input): Control input pins for each channel.
- OUTA/B (Output): Driver outputs to control power transistors.
The device provides additional features like high noise immunity and short propagation delays, making it suitable for high-performance and high-reliability applications.

Manufacturer

The SI8238AB-D-IS1R is manufactured by Skyworks Solutions, Inc. Skyworks is a semiconductor company that designs and produces a broad range of analog and mixed-signal semiconductors. The company focuses on enabling wireless connectivity and supporting applications across a variety of markets, including automotive, broadband, wireless infrastructure, energy management, industrial, medical, and mobile devices. Skyworks is known for its innovative solutions that help facilitate communication and connectivity in the Internet of Things (IoT) landscape.

Application

The SI8238AB-D-IS1R is a dual isolated gate driver, typically used in applications requiring electrical isolation and high-speed performance. Key application areas include:
1. Switch-Mode Power Supplies (SMPS): Provides isolation and drives high-speed switching devices.
2. Motor Drives: Used in inverters for motor control, offering reliable isolation and efficient power conversion.
3. Solar Inverters: Enhances efficiency and isolation in photovoltaic systems.
4. Industrial Automation: Offers robust performance in various automated systems requiring isolated drivers.
5. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and isolation.
6. Power Inverters: Suitable for DC-AC conversion in various electronic systems.
These applications benefit from its high noise immunity, fast switching speeds, and robust isolation capabilities.

Package

The SI8238AB-D-IS1R is an isolated gate driver from Silicon Labs. It comes in a 16-pin SOIC (Small Outline Integrated Circuit) package with a wide body. This package type is suitable for surface mounting and provides isolation for high-side and low-side MOSFET or IGBT gate driving applications.

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