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SI8457DB-T1-E1
+StücklisteMOSFET P-CH 12V 4MICRO FOOT
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HerstellerVishay Siliconix
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Herstellerteil #SI8457DB-T1-E1
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Datenblatt SI8457DB-T1-E1 DataSheet
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Auf Lager18611
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 19mOhm @ 3A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 93 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2900 pF @ 6 V |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-MICRO FOOT® (1.6x1.6) |
Übersicht
Description
The SI8457DB-T1-E1 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. It is a part of Vishay Siliconix's PowerPAK SO-8 family, known for its compact size and high performance. This particular model features dual N-channel enhancement mode MOSFETs, which are commonly used in DC-DC converters, load switch circuits, and synchronous rectification.
Key specifications of the SI8457DB-T1-E1 include low on-resistance, fast switching speed, and a high drain-source breakdown voltage, making it suitable for various power applications. The low on-resistance ensures reduced power loss and improved efficiency, while the fast switching capability enhances performance in high-frequency applications.
The device is packaged in a PowerPAK SO-8 package, which offers excellent thermal performance due to its efficient heat dissipation design. This makes the SI8457DB-T1-E1 well-suited for applications where space is limited, yet reliable power handling is required. Overall, it is ideal for modern electronic systems requiring compact and efficient power management solutions.
Key specifications of the SI8457DB-T1-E1 include low on-resistance, fast switching speed, and a high drain-source breakdown voltage, making it suitable for various power applications. The low on-resistance ensures reduced power loss and improved efficiency, while the fast switching capability enhances performance in high-frequency applications.
The device is packaged in a PowerPAK SO-8 package, which offers excellent thermal performance due to its efficient heat dissipation design. This makes the SI8457DB-T1-E1 well-suited for applications where space is limited, yet reliable power handling is required. Overall, it is ideal for modern electronic systems requiring compact and efficient power management solutions.
Equivalent
The SI8457DB-T1-E1 is an N-channel MOSFET commonly used for power management applications. Equivalent products could include:
1. NXP PSMN2R8-30PL - Similar voltage and current ratings.
2. ON Semiconductor NTMFS5C404NL - Comparable in terms of performance.
3. Infineon BSC026N04LS - Offers similar characteristics.
4. Vishay SI4124DY-T1-E3 - A direct alternative with close specifications.
Ensure to verify the specifications and pin compatibility for exact matching in your application.
1. NXP PSMN2R8-30PL - Similar voltage and current ratings.
2. ON Semiconductor NTMFS5C404NL - Comparable in terms of performance.
3. Infineon BSC026N04LS - Offers similar characteristics.
4. Vishay SI4124DY-T1-E3 - A direct alternative with close specifications.
Ensure to verify the specifications and pin compatibility for exact matching in your application.
Features
The SI8457DB-T1-E1 is a P-Channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Voltage and Current Ratings: It operates with a drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -5.7A, making it suitable for low-voltage applications.
2. Low On-Resistance: The device offers low on-resistance, which reduces power loss and enhances efficiency, especially in applications requiring fast switching.
3. Compact Package: It is available in a small, surface-mount package that is space-saving and suitable for high-density PCB designs.
4. Thermal Performance: The MOSFET is designed to handle thermal stress efficiently, ensuring stable performance under various operating conditions.
5. Applications: Common applications include load switching, DC-DC converters, and power management in portable electronics.
6. ESD Protection: The device is robust against electrostatic discharge, enhancing its reliability and longevity.
Overall, the SI8457DB-T1-E1 is a versatile and efficient solution for managing power in low-voltage electronic systems.
1. Voltage and Current Ratings: It operates with a drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -5.7A, making it suitable for low-voltage applications.
2. Low On-Resistance: The device offers low on-resistance, which reduces power loss and enhances efficiency, especially in applications requiring fast switching.
3. Compact Package: It is available in a small, surface-mount package that is space-saving and suitable for high-density PCB designs.
4. Thermal Performance: The MOSFET is designed to handle thermal stress efficiently, ensuring stable performance under various operating conditions.
5. Applications: Common applications include load switching, DC-DC converters, and power management in portable electronics.
6. ESD Protection: The device is robust against electrostatic discharge, enhancing its reliability and longevity.
Overall, the SI8457DB-T1-E1 is a versatile and efficient solution for managing power in low-voltage electronic systems.
Manufacturer
The SI8457DB-T1-E1 is manufactured by Vishay Intertechnology. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay Intertechnology is known for its wide range of products, including power MOSFETs, diodes, rectifiers, capacitors, resistors, and inductors. These components are widely used across various industries, including automotive, industrial, consumer electronics, telecommunications, and computing. The company is recognized for its commitment to innovation, quality, and reliability in the electronic components sector.
Application
The SI8457DB-T1-E1 is a dual N-channel MOSFET commonly used in various applications. It is typically employed in power management systems, DC-DC converters, load switches, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for efficient power conversion and handling high currents. It is also used in battery management systems, portable electronics, and wireless charging circuits where compact size and efficient power handling are crucial. Additionally, its robust design allows it to be used in automotive electronics and industrial applications where reliability and performance are essential.
Package
The SI8457DB-T1-E1 is a MOSFET transistor from Vishay Siliconix. It typically comes in the PowerPAK SO-8 package type, which is designed for efficient thermal performance and compact size, suitable for surface-mount technology (SMT) applications.
