SIA427ADJ-T1-GE3

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SIA427ADJ-T1-GE3

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MOSFET P-CH 8V 12A PPAK SC70-6

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Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 1.2V, 4.5V
Rds On(Max) @ Id Vgs 16mOhm @ 8.2A, 4.5V
Vgs(th)(Max) @ Id 800mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 5 V
Vgs(Max) ±5V
Input Capacitance(Ciss)(Max) @ Vds 2300 pF @ 4 V
Power Dissipation (Max) 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6

Übersicht

Description

The SIA427ADJ-T1-GE3 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. This device is designed for use in power management applications and features adjustable voltage regulation. As a part of the PowerPAK series, it provides efficient switching capabilities and is often used in DC-DC converters, motor drives, and other power control applications.
Key characteristics of the SIA427ADJ-T1-GE3 include low on-resistance, which reduces energy loss and improves performance, as well as high-speed switching capabilities. The device is housed in a compact package, making it suitable for space-constrained applications. Given its specifications, this MOSFET is ideal for enhancing energy efficiency and reliability in electronic devices.
It's crucial to consult the datasheet for detailed electrical characteristics, thermal properties, and application guidelines when integrating the SIA427ADJ-T1-GE3 into a design. Always ensure compatibility with your specific application requirements for optimal performance.

Equivalent

The SIA427ADJ-T1-GE3 is a P-channel MOSFET produced by Vishay. Equivalent products would be other P-channel MOSFETs with similar specifications such as voltage rating, current capacity, and package type. Potential equivalents include:
1. IRF9540 by Vishay/International Rectifier
2. FQP27P06 by ON Semiconductor
3. SI2333DS by Vishay
It's important to verify specific parameters like Rds(on), gate charge, and package compatibility when selecting an equivalent.

Features

The SIA427ADJ-T1-GE3 is a P-channel MOSFET transistor known for its efficient performance in power management applications. Here are its key features:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of up to -4.2A, making it suitable for low to medium power applications.
2. R_DS(on): The device offers a low on-resistance, ensuring minimal power loss during operation, which enhances efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage is relatively low, facilitating easy drive from microcontrollers or other low voltage sources.
4. Package: It is available in a compact, surface-mount package, such as SOT-23, which is ideal for space-constrained applications.
5. Thermal Performance: The device has good thermal characteristics, allowing it to operate reliably under varying temperature conditions.
6. Applications: It is commonly used in battery management, load switching, and DC-DC conversion circuits.
These features make the SIA427ADJ-T1-GE3 a versatile choice for designers seeking reliable MOSFETs for power-related applications.

Pinout

The SIA427ADJ-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It typically comes in a small, surface-mount package designed for efficient power management applications. The specific package type for this MOSFET is likely a Micro Foot or PowerPAK SC-70, but the exact pin count can vary based on the specific variant or package version.
This MOSFET is primarily used for load switching, DC-DC conversion, and power management applications. It features low on-resistance and is designed to handle high current efficiently. The "ADJ" in its name suggests it might be an adjustable version, possibly relating to voltage or current settings, but this typically refers more to the application circuit rather than any variable functionality within the MOSFET itself.
For precise pin count, function, and detailed specifications, it is recommended to consult the official datasheet provided by Vishay. The datasheet will provide comprehensive information including pin configuration, electrical characteristics, and application guidelines.

Manufacturer

The SIA427ADJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that specializes in the manufacture of discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, Vishay has grown to become a leading global supplier in the electronics industry. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, capacitors, resistors, inductors, and sensors. These components are used in various applications across different industries, such as automotive, industrial, consumer electronics, telecommunications, computing, and military.
Vishay is known for its focus on innovation, quality, and reliability, providing components that are critical in the functioning of electronic circuits and systems. Their products are integral to the performance and efficiency of electronic devices and are used by manufacturers and engineers worldwide to develop advanced technological solutions. With a strong presence globally, Vishay continues to expand its product offerings and capabilities to meet the evolving demands of the electronics market.

Application

The SIA427ADJ-T1-GE3 is an N-channel MOSFET commonly used in applications requiring efficient power management and switching. Its primary application areas include:
1. DC-DC Converters: Utilized in power supply circuits for efficient voltage regulation.
2. Load Switches: Used in electronic devices to control the power supply to various components.
3. Motor Drives: Suitable for controlling and driving motors in consumer electronics and industrial equipment.
4. Battery Management Systems: Helps manage charging and discharging cycles efficiently.
5. Telecommunications: Used in RF and power amplifier circuits for signal processing.
Its high efficiency and low on-resistance make it suitable for compact and energy-sensitive applications.

Package

The SIA427ADJ-T1-GE3 is a P-channel MOSFET packaged in a SOT-23 (Small Outline Transistor) form factor. This package type is commonly used for small electronic components, offering a compact and efficient design suitable for surface-mount technology.

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