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SIA437DJ-T1-GE3
+StücklisteMOSFET P-CH 20V 29.7A PPAK SC70
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HerstellerVishay Siliconix
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Herstellerteil #SIA437DJ-T1-GE3
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Datenblatt SIA437DJ-T1-GE3 DataSheet
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Auf Lager6515
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 29.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 14.5mOhm @ 8A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 90 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2340 pF @ 10 V |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
Übersicht
Description
Key features of the SIA437DJ-T1-GE3 include low on-resistance, which reduces power loss and heat generation, and fast switching speeds, enabling efficient performance in a compact package. The device typically comes in a small, surface-mount package, allowing easy integration into PCBs (Printed Circuit Boards) with limited space.
The SIA437DJ-T1-GE3 is designed to handle high current and voltage levels, making it suitable for driving loads in various electronic devices. It is also optimized for low gate charge, which minimizes the energy required to switch the MOSFET on and off, further enhancing efficiency.
Overall, the SIA437DJ-T1-GE3 is a versatile and efficient component for modern electronic applications that demand reliable and compact power management solutions.
Equivalent
1. FDMA1022PZ by ON Semiconductor
2. SI4435DY by Vishay
3. IRF5305PBF by Infineon Technologies
4. STP55PF06 by STMicroelectronics
Always verify parameters like voltage, current, and package type to ensure compatibility.
Features
1. N-Channel MOSFET: It operates as an N-channel MOSFET, which is suitable for high-speed switching.
2. Low On-Resistance: Features low on-resistance, reducing power loss and improving efficiency.
3. High Power Rating: Capable of handling significant power levels, making it suitable for demanding applications.
4. Fast Switching Speed: Designed for fast switching performance, which is beneficial in applications requiring quick response times.
5. SO-8 Package: Comes in an SO-8 package, which is compact and suitable for surface-mount technology (SMT), offering design flexibility in compact electronic devices.
6. Thermal Performance: Offers good thermal performance, enhancing reliability and longevity in operation.
7. Applications: Commonly used in DC-DC converters, power management, motor drives, and other high-frequency switching applications.
These features make the SIA437DJ-T1-GE3 a reliable choice for engineers designing efficient electronic circuits requiring robust switching capabilities.
Pinout
1. Drain (D): Typically, the four pins on one side of the package (1, 2, 3, 4) are connected to the drain.
2. Gate (G): The gate is pin 5.
3. Source (S): Pins 6, 7, and 8 are usually connected to the source.
The configuration allows for efficient thermal performance and low on-resistance, making it suitable for high-efficiency power systems. The PowerPAK® SO-8 package is designed to offer a compact footprint with good thermal characteristics, appropriate for surface-mount applications.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulators for efficient power conversion.
2. Load Switching: Effective in switching applications for consumer electronics and industrial devices.
3. Motor Drives: Applied in motor control systems for improved efficiency.
4. LED Drivers: Used in lighting applications for driving LEDs with consistent power.
5. Battery Protection: Helps in managing battery charging and discharging in portable devices.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.