SIA437DJ-T1-GE3

Abbildungen dienen nur als Referenz

SIA437DJ-T1-GE3

+Stückliste

MOSFET P-CH 20V 29.7A PPAK SC70

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 29.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 1.5V, 4.5V
Rds On(Max) @ Id Vgs 14.5mOhm @ 8A, 4.5V
Vgs(th)(Max) @ Id 900mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 90 nC @ 8 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 2340 pF @ 10 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6

Übersicht

Description

The SIA437DJ-T1-GE3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is designed for applications requiring efficient power management, such as DC-DC converters, power management for portable devices, and other high-efficiency power switching applications.
Key features of the SIA437DJ-T1-GE3 include low on-resistance, which reduces power loss and heat generation, and fast switching speeds, enabling efficient performance in a compact package. The device typically comes in a small, surface-mount package, allowing easy integration into PCBs (Printed Circuit Boards) with limited space.
The SIA437DJ-T1-GE3 is designed to handle high current and voltage levels, making it suitable for driving loads in various electronic devices. It is also optimized for low gate charge, which minimizes the energy required to switch the MOSFET on and off, further enhancing efficiency.
Overall, the SIA437DJ-T1-GE3 is a versatile and efficient component for modern electronic applications that demand reliable and compact power management solutions.

Equivalent

The SIA437DJ-T1-GE3 is a P-channel MOSFET. Equivalent products may include:
1. FDMA1022PZ by ON Semiconductor
2. SI4435DY by Vishay
3. IRF5305PBF by Infineon Technologies
4. STP55PF06 by STMicroelectronics
Always verify parameters like voltage, current, and package type to ensure compatibility.

Features

The SIA437DJ-T1-GE3 is a MOSFET transistor component primarily used in electronic circuits for switching and amplification purposes. Here are its key features:
1. N-Channel MOSFET: It operates as an N-channel MOSFET, which is suitable for high-speed switching.
2. Low On-Resistance: Features low on-resistance, reducing power loss and improving efficiency.
3. High Power Rating: Capable of handling significant power levels, making it suitable for demanding applications.
4. Fast Switching Speed: Designed for fast switching performance, which is beneficial in applications requiring quick response times.
5. SO-8 Package: Comes in an SO-8 package, which is compact and suitable for surface-mount technology (SMT), offering design flexibility in compact electronic devices.
6. Thermal Performance: Offers good thermal performance, enhancing reliability and longevity in operation.
7. Applications: Commonly used in DC-DC converters, power management, motor drives, and other high-frequency switching applications.
These features make the SIA437DJ-T1-GE3 a reliable choice for engineers designing efficient electronic circuits requiring robust switching capabilities.

Pinout

The SIA437DJ-T1-GE3 is a power MOSFET produced by Vishay Siliconix. It is typically used in applications such as DC-DC converters, load switches, and other power management tasks. This device is housed in a PowerPAK® SO-8 package, which features 8 pins. The pin configuration is as follows:
1. Drain (D): Typically, the four pins on one side of the package (1, 2, 3, 4) are connected to the drain.
2. Gate (G): The gate is pin 5.
3. Source (S): Pins 6, 7, and 8 are usually connected to the source.
The configuration allows for efficient thermal performance and low on-resistance, making it suitable for high-efficiency power systems. The PowerPAK® SO-8 package is designed to offer a compact footprint with good thermal characteristics, appropriate for surface-mount applications.

Manufacturer

The SIA437DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, capacitors, inductors, and sensors, which are used in various sectors like automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is known for its innovation in electronic components and provides essential building blocks for electronic circuitry in a wide array of applications.

Application

The SIA437DJ-T1-GE3 is a power MOSFET typically used in various applications due to its efficiency and compact size. Key application areas include:
1. Power Management: Utilized in DC-DC converters and voltage regulators for efficient power conversion.
2. Load Switching: Effective in switching applications for consumer electronics and industrial devices.
3. Motor Drives: Applied in motor control systems for improved efficiency.
4. LED Drivers: Used in lighting applications for driving LEDs with consistent power.
5. Battery Protection: Helps in managing battery charging and discharging in portable devices.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.

Package

The SIA437DJ-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in a PowerPAK® SC-70 package. This package type is known for its compact size and efficient heat dissipation, making it suitable for space-constrained applications.

Produkte, die mit SIA437DJ-T1-GE3 zusammenhängen