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SIA441DJ-T1-GE3
+StücklisteMOSFET P-CH 40V 12A PPAK SC70-6
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HerstellerVishay Siliconix
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Herstellerteil #SIA441DJ-T1-GE3
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Datenblatt SIA441DJ-T1-GE3 DataSheet
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Paket SC-70
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Auf Lager1739
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 4.4A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 890 pF @ 20 V |
| Power Dissipation (Max) | 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
Übersicht
Description
The SIA441DJ-T1-GE3 is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) component designed by Vishay Intertechnology. It is part of the power MOSFET family and is commonly used in various electronic applications for switching and amplifying electronic signals. The device is housed in a compact, thermally efficient package, making it suitable for space-constrained applications.
Key features of the SIA441DJ-T1-GE3 include low on-resistance, high-speed switching capabilities, and robust thermal performance. The low on-resistance reduces power loss during operation, enhancing the overall efficiency of the system. Its high-speed switching characteristics make it suitable for applications requiring fast response times, such as in power management and DC-DC converters.
The MOSFET also features a low gate charge, which minimizes the power required to drive the device, further improving efficiency. The SIA441DJ-T1-GE3 is typically used in applications like power management circuits, load switches, and motor control systems, where reliable performance and efficiency are critical.
Key features of the SIA441DJ-T1-GE3 include low on-resistance, high-speed switching capabilities, and robust thermal performance. The low on-resistance reduces power loss during operation, enhancing the overall efficiency of the system. Its high-speed switching characteristics make it suitable for applications requiring fast response times, such as in power management and DC-DC converters.
The MOSFET also features a low gate charge, which minimizes the power required to drive the device, further improving efficiency. The SIA441DJ-T1-GE3 is typically used in applications like power management circuits, load switches, and motor control systems, where reliable performance and efficiency are critical.
Equivalent
The SIA441DJ-T1-GE3 is a power MOSFET typically used in switching applications. Equivalent products would be those with similar specifications such as voltage, current ratings, and package type. Some potential equivalents could include:
1. NXP's PSMN015-30MLC
2. ON Semiconductor's NTD3055-150
3. Infineon's BSC123N08NS3
Always confirm the specifications, as equivalents may vary slightly in performance or characteristics.
1. NXP's PSMN015-30MLC
2. ON Semiconductor's NTD3055-150
3. Infineon's BSC123N08NS3
Always confirm the specifications, as equivalents may vary slightly in performance or characteristics.
Features
The SIA441DJ-T1-GE3 is a dual N-channel MOSFET designed for efficient power management solutions. Key features include:
1. Dual N-Channel Configuration: This allows for effective handling of current and voltage, optimizing performance in compact designs.
2. Low On-Resistance: It features a low on-state resistance, which minimizes power dissipation and improves efficiency.
3. High-Speed Switching: The MOSFET supports high-speed switching, making it suitable for applications requiring fast response times.
4. Thermal Efficiency: It is designed to manage heat effectively, enhancing reliability in demanding environments.
5. Small Form Factor: The compact package is ideal for space-constrained applications, enabling dense circuit designs.
6. RoHS Compliant: Ensures it meets environmental and safety standards, making it a sustainable choice for electronic designs.
These features make the SIA441DJ-T1-GE3 suitable for various applications, including power management, DC-DC converters, and load switching.
1. Dual N-Channel Configuration: This allows for effective handling of current and voltage, optimizing performance in compact designs.
2. Low On-Resistance: It features a low on-state resistance, which minimizes power dissipation and improves efficiency.
3. High-Speed Switching: The MOSFET supports high-speed switching, making it suitable for applications requiring fast response times.
4. Thermal Efficiency: It is designed to manage heat effectively, enhancing reliability in demanding environments.
5. Small Form Factor: The compact package is ideal for space-constrained applications, enabling dense circuit designs.
6. RoHS Compliant: Ensures it meets environmental and safety standards, making it a sustainable choice for electronic designs.
These features make the SIA441DJ-T1-GE3 suitable for various applications, including power management, DC-DC converters, and load switching.
Pinout
The SIA441DJ-T1-GE3 is a MOSFET transistor produced by Vishay Siliconix. It comes in a PowerPAK SC-70 package, which is a small form factor suitable for various applications. This device is typically used for load switching and power management in portable devices due to its compact size and efficient performance.
The SIA441DJ is a single N-channel MOSFET. The specific pin count for the PowerPAK SC-70 package is 6 pins. Here is a concise breakdown of its pin functions:
1. Drain (D1, D2, D3): The drain pins are internally connected to the same terminal inside the MOSFET and are located on one side of the package. They are used to conduct the current from the load.
2. Source (S): The source pin is where the current enters the MOSFET. It is located opposite the drain pins.
3. Gate (G): The gate pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the transistor is turned on or off, allowing or restricting current flow between the drain and source.
This MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for various high-efficiency power applications.
The SIA441DJ is a single N-channel MOSFET. The specific pin count for the PowerPAK SC-70 package is 6 pins. Here is a concise breakdown of its pin functions:
1. Drain (D1, D2, D3): The drain pins are internally connected to the same terminal inside the MOSFET and are located on one side of the package. They are used to conduct the current from the load.
2. Source (S): The source pin is where the current enters the MOSFET. It is located opposite the drain pins.
3. Gate (G): The gate pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the transistor is turned on or off, allowing or restricting current flow between the drain and source.
This MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for various high-efficiency power applications.
Manufacturer
The SIA441DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing discrete semiconductors and passive electronic components. The company was founded in 1962 and has since grown to become one of the largest suppliers in the world of these types of electronic components. Vishay's product portfolio includes a wide range of products such as diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors, which are used in various industries including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. The company is renowned for its strong emphasis on innovation and quality, consistently investing in research and development to provide cutting-edge solutions for its customers.
Application
The SIA441DJ-T1-GE3 is a dual N-channel MOSFET designed for efficient power management and switching applications. Key application areas include:
1. DC-DC Converters: Used in power management for efficient voltage regulation.
2. Load Switches: Suitable for controlling power to various loads in electronic devices.
3. Battery Management Systems: Helps in managing battery charging and discharging.
4. Motor Drives: Used in controlling small motors in consumer electronics.
5. Consumer Electronics: Applicable in devices like laptops and smartphones for power efficiency.
6. Telecommunications: Useful in infrastructure equipment for signal processing.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. DC-DC Converters: Used in power management for efficient voltage regulation.
2. Load Switches: Suitable for controlling power to various loads in electronic devices.
3. Battery Management Systems: Helps in managing battery charging and discharging.
4. Motor Drives: Used in controlling small motors in consumer electronics.
5. Consumer Electronics: Applicable in devices like laptops and smartphones for power efficiency.
6. Telecommunications: Useful in infrastructure equipment for signal processing.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The SIA441DJ-T1-GE3 is a MOSFET and it comes in a PowerPAK® SO-8 package. This package type is known for its efficient thermal performance and compact size, suitable for surface-mount technology.
