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SIA447DJ-T1-GE3
+StücklisteMOSFET P-CH 12V 12A PPAK SC70-6
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HerstellerVishay Siliconix
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Herstellerteil #SIA447DJ-T1-GE3
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Datenblatt SIA447DJ-T1-GE3 DataSheet
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Auf Lager16558
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 13.5mOhm @ 7A, 4.5V |
| Vgs(th)(Max) @ Id | 850mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2880 pF @ 6 V |
| Power Dissipation (Max) | 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
Übersicht
Description
The SIA447DJ-T1-GE3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronics for switching and amplification applications. This component is typically used in power management systems due to its efficiency and high-speed switching capabilities. It belongs to the family of N-channel MOSFETs and is characterized by its low on-resistance, which minimizes power losses and improves thermal performance.
The "T1" in the part number usually refers to the packaging type or a specific feature set, while "GE3" might indicate a particular series or compliance with environmental standards, such as RoHS (Restriction of Hazardous Substances). The SIA447DJ is often used in DC-DC converters, motor drives, and other applications requiring efficient power control. It is designed to handle significant power loads while maintaining reliability and stability.
The compact size and efficiency make it suitable for compact and portable electronic devices, contributing to longer battery life and reducing overall system costs.
The "T1" in the part number usually refers to the packaging type or a specific feature set, while "GE3" might indicate a particular series or compliance with environmental standards, such as RoHS (Restriction of Hazardous Substances). The SIA447DJ is often used in DC-DC converters, motor drives, and other applications requiring efficient power control. It is designed to handle significant power loads while maintaining reliability and stability.
The compact size and efficiency make it suitable for compact and portable electronic devices, contributing to longer battery life and reducing overall system costs.
Equivalent
The SIA447DJ-T1-GE3 is a P-channel MOSFET. Equivalent products that have similar specifications might include:
1. AO3401A by Alpha & Omega Semiconductor
2. SI2301 by Vishay
3. FDS6679 by Fairchild Semiconductor
4. NTJS3151P by ON Semiconductor
It's important to verify specific parameters like voltage, current ratings, and package type to ensure they meet your requirements. Always check the datasheets for precise specifications.
1. AO3401A by Alpha & Omega Semiconductor
2. SI2301 by Vishay
3. FDS6679 by Fairchild Semiconductor
4. NTJS3151P by ON Semiconductor
It's important to verify specific parameters like voltage, current ratings, and package type to ensure they meet your requirements. Always check the datasheets for precise specifications.
Features
The SIA447DJ-T1-GE3 is a N-channel MOSFET designed for various applications requiring efficient power management and switching. Key features include:
1. Voltage and Current Ratings: Typically features a drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) capability, which is suitable for moderate power applications.
2. Low On-Resistance: Offers a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
3. Fast Switching Speed: Designed to provide rapid switching performance, making it suitable for high-frequency applications.
4. Thermal Performance: Equipped with excellent thermal resistance characteristics, ensuring reliable performance under thermal stress.
5. Compact Package: Available in a space-saving PowerPAK® SO-8 package, facilitating integration into compact circuit designs.
6. RoHS Compliant: Meets environmental standards for safety and sustainability.
These features make the SIA447DJ-T1-GE3 suitable for use in power conversion, battery management, and motor control applications within consumer electronics, automotive, and industrial sectors.
1. Voltage and Current Ratings: Typically features a drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) capability, which is suitable for moderate power applications.
2. Low On-Resistance: Offers a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
3. Fast Switching Speed: Designed to provide rapid switching performance, making it suitable for high-frequency applications.
4. Thermal Performance: Equipped with excellent thermal resistance characteristics, ensuring reliable performance under thermal stress.
5. Compact Package: Available in a space-saving PowerPAK® SO-8 package, facilitating integration into compact circuit designs.
6. RoHS Compliant: Meets environmental standards for safety and sustainability.
These features make the SIA447DJ-T1-GE3 suitable for use in power conversion, battery management, and motor control applications within consumer electronics, automotive, and industrial sectors.
Pinout
The SIA447DJ-T1-GE3 is a P-channel MOSFET produced by Vishay Siliconix. This MOSFET typically comes in a PowerPAK SCD package, which features a small outline with a low profile. The pin count for this MOSFET is 3 pins. The primary function of the SIA447DJ-T1-GE3 is to serve as a switch or amplifier in electronic circuits, allowing for efficient power management and control. It is commonly used in applications requiring low voltage and high current switching, such as in power management for portable devices, DC-DC converters, and motor control circuits. The device is characterized by its low on-resistance and fast switching capabilities, making it suitable for high-efficiency power conversion.
Manufacturer
The SIA447DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, USA, the company produces a wide range of products including diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors. Vishay's products are used in various industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical applications. The company is known for its innovation and reliability in electronic components, playing a significant role in the electronics supply chain.
Application
The SIA447DJ-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Its primary application areas include power management in consumer electronics, load switching, DC-DC converters, and battery protection circuits. It is also utilized in automotive applications, industrial automation systems, and telecommunications equipment due to its efficiency in handling low to medium power levels and its fast switching characteristics. Its compact packaging makes it suitable for space-constrained designs.
Package
The SIA447DJ-T1-GE3 is a power MOSFET with a package type of PowerPAK® SO-8. This package is designed for efficient heat dissipation and compact size, suitable for applications requiring high power density.
