SIA449DJ-T1-GE3

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SIA449DJ-T1-GE3

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MOSFET P-CH 30V 12A PPAK SC70-6

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V
Rds On(Max) @ Id Vgs 20mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 72 nC @ 10 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 2140 pF @ 15 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6

Übersicht

Description

The SIA449DJ-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
- High Current Handling: Supports up to 100A (pulsed) with a 40V drain-source voltage rating.
- Fast Switching: Optimized for high-frequency DC-DC converters, motor drives, and load switches.
- Advanced Packaging: Housed in a PowerPAK® SO-8 package for enhanced thermal performance and power density.
Ideal for automotive, industrial, and computing applications, this MOSFET offers robust performance in compact designs. Its AEC-Q101 qualification ensures reliability for automotive use.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SIA449DJ-T1-GE3 (a 40V N-channel MOSFET) include:
- SI4499DY-T1-GE3 (Similar specs, same package)
- IRLML6402TRPBF (20V P-channel, comparable use cases)
- AO3401A (30V P-channel alternative)
- DMG2305UX (20V P-channel, SOT-23 package)
Check datasheets for exact compatibility in your application.

Pinout

The SIA449DJ-T1-GE3 is a 3-pin Schottky barrier diode designed for high-efficiency rectification.
Pin Functions:
1. Pin 1 (Anode 1) – First anode terminal.
2. Pin 2 (Anode 2) – Second anode terminal (common in dual-diode configurations).
3. Pin 3 (Cathode) – Shared cathode for both diodes.
Key Features:
- Low forward voltage drop (~0.5V typical).
- High current capability (up to 3A).
- Fast switching for power applications.
Commonly used in DC-DC converters, power supplies, and reverse polarity protection.

Manufacturer

The SIA449DJ-T1-GE3 is a MOSFET manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay is a well-established American company founded in 1962, known for producing high-performance discrete semiconductors, diodes, resistors, and capacitors. They serve industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SIA449DJ-T1-GE3 is part of Vishay’s Siliconix product line, specializing in power MOSFETs for efficient switching applications.

Package

The SIA449DJ-T1-GE3 is a DFN-8 (3x3) package type, also known as PowerPAK® 1212-8. It is a compact, surface-mount package designed for high-power applications, offering efficient thermal performance and a small footprint. Suitable for MOSFETs, it ensures reliable power handling in space-constrained designs.

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