SIA950DJ-T1-GE3

Abbildungen dienen nur als Referenz

SIA950DJ-T1-GE3

+Stückliste

MOSFET 2N-CH 190V 0.95A SC-70-6

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series LITTLE FOOT®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 190V
Current - Continuous Drain(Id) @ 25°C 950mA
Rds On(Max) @ Id Vgs 3.8Ohm @ 360mA, 4.5V
Vgs(th)(Max) @ Id 1.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.5nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 90pF @ 100V
Power - Max 7W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Produkte, die mit SIA950DJ-T1-GE3 zusammenhängen