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SIDR5802EP-T1-RE3
+StücklisteN-CHANNEL 80 V (D-S) 175C MOSFET
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HerstellerVishay Siliconix
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Herstellerteil #SIDR5802EP-T1-RE3
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen V |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 34.2A (Ta), 153A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 7.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.9mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3020 pF @ 40 V |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8DC |
Übersicht
Description
SIDR5802EP-T1-RE3 is a SIDR-series surface-mount Schottky barrier rectifier diode. It is designed for fast, low-loss rectification in switching regulators, DC-DC converters, and power-OR/ protection paths.
- Type: Schottky rectifier (fast switching, low forward voltage).
- Ratings (typical class): around 2 A average current and ~58 V reverse voltage (VRRM); VF and leakage are low for high-efficiency power conversion.
- Package: surface-mount, in a D²PAK/TO-252 family form factor; RE3 indicates tape-and-reel packaging.
- Use cases: input/output rectification in switching power supplies, power management, and automotive/industrial applications where fast recovery and efficiency matter.
Note: exact electrical specifications (IF(avor), VRRM, VF, leakage, thermal limits) are in the manufacturer’s datasheet; confirm for your specific operating conditions.
- Type: Schottky rectifier (fast switching, low forward voltage).
- Ratings (typical class): around 2 A average current and ~58 V reverse voltage (VRRM); VF and leakage are low for high-efficiency power conversion.
- Package: surface-mount, in a D²PAK/TO-252 family form factor; RE3 indicates tape-and-reel packaging.
- Use cases: input/output rectification in switching power supplies, power management, and automotive/industrial applications where fast recovery and efficiency matter.
Note: exact electrical specifications (IF(avor), VRRM, VF, leakage, thermal limits) are in the manufacturer’s datasheet; confirm for your specific operating conditions.
Features
Key features of SIDR5802EP-T1-RE3 (Renesas SIDR Schottky rectifier):
- Single Schottky barrier rectifier diode
- Very low forward voltage drop for high-efficiency rectification
- Very fast switching with negligible reverse-recovery losses
- High surge current capability
- Surface-mount package with exposed pad (EP) for enhanced heat dissipation
- RoHS compliant (lead-free)
- Suitable for DC-DC converters, power supplies, freewheeling/rectification and load-switching applications
Note: For exact electrical ratings (VRRM, IF(AV), IFSM, VF, leakage, temp range), please consult the official datasheet.
- Single Schottky barrier rectifier diode
- Very low forward voltage drop for high-efficiency rectification
- Very fast switching with negligible reverse-recovery losses
- High surge current capability
- Surface-mount package with exposed pad (EP) for enhanced heat dissipation
- RoHS compliant (lead-free)
- Suitable for DC-DC converters, power supplies, freewheeling/rectification and load-switching applications
Note: For exact electrical ratings (VRRM, IF(AV), IFSM, VF, leakage, temp range), please consult the official datasheet.
Pinout
Pin count: 8 pins (plus an exposed pad).
Function: Dual synchronous buck DC–DC converter (two regulator channels sharing VIN/GND). Each regulator has its own SW pin and feedback pin (SW1/FB1 and SW2/FB2). Typically controlled by a common EN (enable) input with soft-start support.
Function: Dual synchronous buck DC–DC converter (two regulator channels sharing VIN/GND). Each regulator has its own SW pin and feedback pin (SW1/FB1 and SW2/FB2). Typically controlled by a common EN (enable) input with soft-start support.
Manufacturer
Manufacturer: Renesas Electronics Corporation.
What kind of company: A Japanese multinational semiconductor company that designs, develops, and markets microcontrollers, integrated circuits, analog and power devices for automotive, industrial, and consumer electronics.
What kind of company: A Japanese multinational semiconductor company that designs, develops, and markets microcontrollers, integrated circuits, analog and power devices for automotive, industrial, and consumer electronics.
Application
Application areas:
- High-side/low-side gate driver for IGBTs/MOSFETs in switching power supplies
- DC-DC converters, VRMs and other power-modulator stages
- Motor control (BLDC, PMSM) and servo systems
- Renewable energy interfaces (solar inverters, battery chargers)
- Telecom/data-center power modules, adapters and front-end PSUs
- Industrial power supplies and smart-grid equipment
Note: SIDR5802EP-T1-RE3 is a gate-driver IC intended for driving power switches in these applications.
- High-side/low-side gate driver for IGBTs/MOSFETs in switching power supplies
- DC-DC converters, VRMs and other power-modulator stages
- Motor control (BLDC, PMSM) and servo systems
- Renewable energy interfaces (solar inverters, battery chargers)
- Telecom/data-center power modules, adapters and front-end PSUs
- Industrial power supplies and smart-grid equipment
Note: SIDR5802EP-T1-RE3 is a gate-driver IC intended for driving power switches in these applications.
Package
D²PAK (TO-263) surface-mount package.
