Abbildungen dienen nur als Referenz
SIHG20N50C-E3
+StücklisteMOSFET N-CH 500V 20A TO247AC
-
HerstellerVishay Siliconix
-
Herstellerteil #SIHG20N50C-E3
-
Datenblatt SIHG20N50C-E3 DataSheet
-
Paket TO-247-3
-
Auf Lager1261
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 270mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 76 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2942 pF @ 25 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Übersicht
Description
The SIHG20N50C-E3 is a N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is commonly used in various electronic applications due to its high efficiency and reliability. This MOSFET is characterized by a low on-resistance and high-speed switching capabilities, making it suitable for high-performance power conversion and management tasks.
Key features of the SIHG20N50C-E3 include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage around 500V and a continuous drain current up to 20A, depending on specific operating conditions.
2. Package: Generally available in industry-standard packages like TO-220, which aids in efficient heat dissipation.
3. Applications: It is widely used in power supplies, motor drives, and other high-voltage applications.
4. Efficiency: Designed to reduce energy losses during switching, contributing to improved overall system efficiency.
This component is advantageous for applications requiring robustness and performance at high voltages and currents.
Key features of the SIHG20N50C-E3 include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage around 500V and a continuous drain current up to 20A, depending on specific operating conditions.
2. Package: Generally available in industry-standard packages like TO-220, which aids in efficient heat dissipation.
3. Applications: It is widely used in power supplies, motor drives, and other high-voltage applications.
4. Efficiency: Designed to reduce energy losses during switching, contributing to improved overall system efficiency.
This component is advantageous for applications requiring robustness and performance at high voltages and currents.
Equivalent
The SIHG20N50C-E3 is a Vishay power MOSFET. Equivalent products may include:
1. IRF520 by Infineon Technologies (similar voltage and current ratings)
2. STP20N50 by STMicroelectronics (similar specifications)
3. FQA20N50 by ON Semiconductor (similar characteristics)
When selecting equivalents, ensure compatibility in terms of voltage, current ratings, package type, and switching characteristics for your specific application. Always cross-reference datasheets to confirm suitability.
1. IRF520 by Infineon Technologies (similar voltage and current ratings)
2. STP20N50 by STMicroelectronics (similar specifications)
3. FQA20N50 by ON Semiconductor (similar characteristics)
When selecting equivalents, ensure compatibility in terms of voltage, current ratings, package type, and switching characteristics for your specific application. Always cross-reference datasheets to confirm suitability.
Features
The SIHG20N50C-E3 is a power MOSFET designed for high-efficiency applications. Here are its key features:
1. N-Channel MOSFET: It uses an N-channel configuration, which is typically faster and more efficient for switching applications.
2. Voltage and Current Ratings: It handles a drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 20A, making it suitable for high-power applications.
3. Low On-Resistance: The device features low on-state resistance, enhancing efficiency by reducing power loss during operation.
4. High-Speed Switching: Designed for fast switching, which improves performance in power conversion and switching applications.
5. TO-220 Package: It comes in a TO-220 package, providing ease of use for heat dissipation and mounting.
6. Rugged Design: The MOSFET has a robust design to withstand high energy pulses, ensuring reliability and longevity.
7. Protective Features: It may include features such as avalanche energy ratings, indicating its ability to handle transient voltages safely.
These attributes make it a suitable choice for applications like power supplies, motor drives, and other high-voltage and high-current systems.
1. N-Channel MOSFET: It uses an N-channel configuration, which is typically faster and more efficient for switching applications.
2. Voltage and Current Ratings: It handles a drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 20A, making it suitable for high-power applications.
3. Low On-Resistance: The device features low on-state resistance, enhancing efficiency by reducing power loss during operation.
4. High-Speed Switching: Designed for fast switching, which improves performance in power conversion and switching applications.
5. TO-220 Package: It comes in a TO-220 package, providing ease of use for heat dissipation and mounting.
6. Rugged Design: The MOSFET has a robust design to withstand high energy pulses, ensuring reliability and longevity.
7. Protective Features: It may include features such as avalanche energy ratings, indicating its ability to handle transient voltages safely.
These attributes make it a suitable choice for applications like power supplies, motor drives, and other high-voltage and high-current systems.
Pinout
The SIHG20N50C-E3 is a power MOSFET manufactured by Vishay Siliconix. It features a TO-247 package and has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the conductivity of the MOSFET. By applying a voltage to the gate, the MOSFET switches between its conducting and non-conducting states.
2. Drain (D): This is the pin where the main current flows into the MOSFET when it is in the conducting state. It is connected to the load in most applications.
3. Source (S): This pin completes the circuit for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply in many configurations.
The SIHG20N50C-E3 is designed for high-efficiency switching applications, providing features such as low on-resistance and fast switching speeds, making it suitable for power conversion and regulation tasks.
1. Gate (G): This pin is used to control the conductivity of the MOSFET. By applying a voltage to the gate, the MOSFET switches between its conducting and non-conducting states.
2. Drain (D): This is the pin where the main current flows into the MOSFET when it is in the conducting state. It is connected to the load in most applications.
3. Source (S): This pin completes the circuit for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply in many configurations.
The SIHG20N50C-E3 is designed for high-efficiency switching applications, providing features such as low on-resistance and fast switching speeds, making it suitable for power conversion and regulation tasks.
Manufacturer
The SIHG20N50C-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a globally recognized company that specializes in the design, manufacture, and supply of a broad range of electronic components. These components include semiconductors such as diodes, MOSFETs, and optoelectronics, as well as passive components like resistors, capacitors, and inductors. Vishay's products are widely used in various industries, including automotive, industrial, consumer electronics, computing, telecommunications, military, aerospace, and more. The company is known for its innovation and reliable products that meet the demands of high-performance applications.
Application
The SIHG20N50C-E3 is a power MOSFET, typically used in applications requiring efficient power switching and conversion. Key application areas include:
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for improved efficiency and thermal performance.
2. Motor Drives: Used in motor control applications, offering fast switching and low conduction losses.
3. Inverters: Suitable for photovoltaic inverters and uninterruptible power supplies (UPS) due to its high voltage rating.
4. Lighting: Applied in LED lighting systems for efficient power management.
5. Consumer Electronics: Integrated into devices for power management tasks, enhancing energy efficiency.
These applications benefit from the MOSFET's high speed, efficiency, and reliability.
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for improved efficiency and thermal performance.
2. Motor Drives: Used in motor control applications, offering fast switching and low conduction losses.
3. Inverters: Suitable for photovoltaic inverters and uninterruptible power supplies (UPS) due to its high voltage rating.
4. Lighting: Applied in LED lighting systems for efficient power management.
5. Consumer Electronics: Integrated into devices for power management tasks, enhancing energy efficiency.
These applications benefit from the MOSFET's high speed, efficiency, and reliability.
Package
The SIHG20N50C-E3 is a power MOSFET with a TO-247 package type.
