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SIR167DP-T1-GE3
+StücklisteMOSFET P-CH 30V 60A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR167DP-T1-GE3
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Auf Lager2535
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 111 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 4380 pF @ 15 V |
| Power Dissipation (Max) | 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
Application
- DC-DC converters and power rails in telecom/computer equipment
- Freewheeling/rectification diodes in buck/boost topologies
- Battery charging circuits and portable devices
- Automotive and industrial power electronics (polarity protection, OR-ing)