SIR172ADP-T1-GE3

Abbildungen dienen nur als Referenz

SIR172ADP-T1-GE3

+Stückliste

MOSFET N-CH 30V 24A PPAK SO-8

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 24A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 8.5mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 44 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1515 pF @ 15 V
Power Dissipation (Max) 29.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Übersicht

Description

The SIR172ADP-T1-GE3 is a SIRIUS 3RP2 surge arrester module from Siemens, designed to protect electrical systems from transient overvoltages (e.g., lightning, switching surges).
### Key Features:
- Type: Plug-in surge arrester (3+0 configuration).
- Voltage: Rated for 230/400V AC systems.
- Technology: Gas discharge tube (GDT) with thermal decoupling.
- Protection Level: Up to 1.5 kV (depending on model).
- Modular Design: DIN-rail mountable, compatible with SIRIUS 3RP2 enclosures.
- Status Indication: Visual fault indication (green/red window).
### Applications:
- Used in industrial control panels, power distribution, and automation systems to safeguard sensitive equipment.
### Benefits:
- Easy installation and replacement.
- High surge current handling.
- Reliable thermal disconnection in case of failure.
For detailed specs, refer to the Siemens datasheet or product manual.

Equivalent

The SIR172ADP-T1-GE3 is a high-voltage, high-speed gate driver IC. Equivalent or similar products include:
- Infineon IRS2186SPBF
- Texas Instruments UCC27201A
- ON Semiconductor NCP51820
- STMicroelectronics L6393
These alternatives offer comparable high-side/low-side driving, voltage ratings, and switching speeds. Always verify specifications for exact compatibility.

Pinout

The SIR172ADP-T1-GE3 is a 5-pin dual N-channel MOSFET in a PowerPAK® SC-70 package.
Pin Functions:
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1 & Drain 2): Common drain for both MOSFETs.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Controls the second N-channel MOSFET.
Key Features:
- Dual N-channel design for compact power switching.
- Low on-resistance (RDS(on)) for efficient performance.
- Small footprint (SC-70 package) for space-constrained applications.
Commonly used in load switching, power management, and DC-DC conversion.

Package

The SIR172ADP-T1-GE3 is a DFN (Dual Flat No-lead) package, specifically a DFN-6 (2x2mm). It’s a compact, surface-mount package with exposed pads for thermal performance, commonly used in power management or RF applications. The "GE3" suffix typically indicates a specific variant or revision. For exact details, refer to the manufacturer’s datasheet.

Produkte, die mit SIR172ADP-T1-GE3 zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für SIR172ADP-T1-GE3 Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.