SIR422DP-T1-GE3

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SIR422DP-T1-GE3

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MOSFET N-CH 40V 40A PPAK SO-8

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 40A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 6.6mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 48 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1785 pF @ 20 V
Power Dissipation (Max) 5W (Ta), 34.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Übersicht

Description

The SIR422DP-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, motor control, and load switching.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max) at 10V
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, surface-mount)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Synchronous rectification in power supplies
- Battery management systems
- Industrial & automotive power systems
This MOSFET offers high current handling, low conduction losses, and thermal efficiency, making it ideal for space-constrained, high-performance designs.

Equivalent

Equivalent products to the SIR422DP-T1-GE3 (Vishay) include:
- STP80NF55-06 (STMicroelectronics)
- IRF3205 (Infineon)
- FDP8870 (ON Semiconductor)
These are N-channel MOSFETs with similar voltage (55V-60V), current (80A-100A), and power handling specs. Check datasheets for exact compatibility in your application.

Application

The SIR422DP-T1-GE3 is a dual N-channel MOSFET used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – Engine control, LED lighting, infotainment.
3. Industrial Applications – Motor drives, power supplies.
4. Consumer Electronics – Fast-switching circuits in devices.
5. Telecom/Networking – Power distribution in servers/routers.
Its low on-resistance (RDS(on)) and high efficiency make it ideal for high-performance, energy-efficient designs.

Package

The SIR422DP-T1-GE3 is a dual P-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The package type ensures high power density and reliability in a small footprint.

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