SIR426DP-T1-GE3

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SIR426DP-T1-GE3

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MOSFET N-CH 40V 30A PPAK SO-8

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Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 10.5mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 31 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1160 pF @ 20 V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Übersicht

Description

The SIR426DP-T1-GE3 is a specific model of a Schottky barrier rectifier diode. Schottky diodes are semiconductor devices commonly used for their fast switching capabilities and low forward voltage drop, making them efficient for high-frequency applications. The "SIR426DP" typically refers to the series or specific part number within the manufacturer's product line, while "T1" may indicate the package type or configuration, and "GE3" could denote a specific manufacturing or quality grade identifier. These diodes are often utilized in power supply circuits, reverse polarity protection, and radio frequency applications due to their efficiency and performance characteristics. The low forward voltage drop helps to reduce power loss, which is crucial in battery-operated devices. Moreover, their fast recovery time supports high-speed switching operations, making them ideal for modern electronic devices. For detailed specifications and usage, consulting the datasheet provided by the manufacturer is recommended.

Equivalent

The SIR426DP-T1-GE3 is a power MOSFET from Vishay. Equivalent products from other manufacturers may include the IRF540N from International Rectifier/Infineon, the FQP30N06L from ON Semiconductor, and the NTD4906N from ON Semiconductor. These equivalents might not match all specifications but could be considered based on similar general characteristics. Always verify specific parameters like voltage, current rating, and package compatibility before substituting.

Features

The SIR426DP-T1-GE3 is a high-performance N-channel MOSFET, commonly used in power management and switching applications. Key features include:
1. Low On-Resistance: It exhibits low R_DS(on), ensuring efficient current flow with minimal power loss, ideal for applications requiring high efficiency.
2. High Power Handling: Capable of handling high levels of power, suitable for applications like motor drives and power conversion.
3. Fast Switching: The device supports rapid switching speeds, advantageous in applications needing quick operation.
4. Compact Package: Available in a compact package, optimizing space usage in circuit designs.
5. Robust Design: Features a rugged construction, enhancing reliability and lifespan in demanding environments.
6. Thermal Efficiency: Designed for superior thermal performance, reducing overheating risks during operation.
These features make the SIR426DP-T1-GE3 a versatile component in various electronics, particularly where space, efficiency, and reliability are critical.

Pinout

The SIR426DP-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is housed in a PowerPAK SO-8 package, which typically has an 8-pin configuration. The MOSFET is designed for power management applications, offering high efficiency and fast switching speeds.
Key functions include:
1. Drain (D): The terminal through which the main current enters the MOSFET when it is in the "on" state.
2. Gate (G): The terminal that controls the MOSFET; applying a voltage here changes the state of the device from "off" to "on."
3. Source (S): The terminal through which the main current exits the MOSFET; it's the return path for the current.
The SIR426DP-T1-GE3 is typically used in synchronous rectification, DC-DC converters, and other applications requiring efficient power management. It offers low on-resistance and high-speed switching, making it suitable for high-performance electronic circuits. For precise pin configuration and electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The SIR426DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of components including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay serves various markets such as automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical.
Founded in 1962 by Dr. Felix Zandman, Vishay is headquartered in Malvern, Pennsylvania, USA. The company has grown significantly over the years through strategic acquisitions and organic growth, becoming one of the largest manufacturers of electronic components worldwide. Its products are essential for a wide array of devices and systems, making it a critical player in the electronics industry. Vishay is known for its innovation and quality, providing reliable and high-performance components that meet the demands of modern electronic applications.

Application

The SIR426DP-T1-GE3 is a MOSFET transistor commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in power supply circuits, DC-DC converters, and voltage regulation.
2. Switching Applications: Ideal for high-speed switching tasks in electronic devices.
3. Motor Control: Employed in controlling and driving small to medium-sized motors.
4. Load Switching: Suitable for switching loads in consumer electronics.
5. Lighting: Utilized in LED drivers and lighting control systems.
6. Automotive: Found in automotive circuits for efficient power handling.
These applications benefit from the MOSFET's efficiency, speed, and reliability.

Package

The SIR426DP-T1-GE3 is a surface-mount package type, specifically in a PowerPAK SO-8 form. This package is widely used for its efficient heat dissipation and compact size, making it suitable for high-performance applications in electronics.

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