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SIR426DP-T1-GE3
+StücklisteMOSFET N-CH 40V 30A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR426DP-T1-GE3
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Datenblatt SIR426DP-T1-GE3 DataSheet
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Paket PowerPAK-SO-8
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Auf Lager3767
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 31 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1160 pF @ 20 V |
| Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
Equivalent
Features
1. Low On-Resistance: It exhibits low R_DS(on), ensuring efficient current flow with minimal power loss, ideal for applications requiring high efficiency.
2. High Power Handling: Capable of handling high levels of power, suitable for applications like motor drives and power conversion.
3. Fast Switching: The device supports rapid switching speeds, advantageous in applications needing quick operation.
4. Compact Package: Available in a compact package, optimizing space usage in circuit designs.
5. Robust Design: Features a rugged construction, enhancing reliability and lifespan in demanding environments.
6. Thermal Efficiency: Designed for superior thermal performance, reducing overheating risks during operation.
These features make the SIR426DP-T1-GE3 a versatile component in various electronics, particularly where space, efficiency, and reliability are critical.
Pinout
Key functions include:
1. Drain (D): The terminal through which the main current enters the MOSFET when it is in the "on" state.
2. Gate (G): The terminal that controls the MOSFET; applying a voltage here changes the state of the device from "off" to "on."
3. Source (S): The terminal through which the main current exits the MOSFET; it's the return path for the current.
The SIR426DP-T1-GE3 is typically used in synchronous rectification, DC-DC converters, and other applications requiring efficient power management. It offers low on-resistance and high-speed switching, making it suitable for high-performance electronic circuits. For precise pin configuration and electrical characteristics, refer to the manufacturer's datasheet.
Manufacturer
Founded in 1962 by Dr. Felix Zandman, Vishay is headquartered in Malvern, Pennsylvania, USA. The company has grown significantly over the years through strategic acquisitions and organic growth, becoming one of the largest manufacturers of electronic components worldwide. Its products are essential for a wide array of devices and systems, making it a critical player in the electronics industry. Vishay is known for its innovation and quality, providing reliable and high-performance components that meet the demands of modern electronic applications.
Application
1. Power Management: Used in power supply circuits, DC-DC converters, and voltage regulation.
2. Switching Applications: Ideal for high-speed switching tasks in electronic devices.
3. Motor Control: Employed in controlling and driving small to medium-sized motors.
4. Load Switching: Suitable for switching loads in consumer electronics.
5. Lighting: Utilized in LED drivers and lighting control systems.
6. Automotive: Found in automotive circuits for efficient power handling.
These applications benefit from the MOSFET's efficiency, speed, and reliability.