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SIR622DP-T1-GE3
+StücklisteMOSFET N-CH 150V 51.6A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR622DP-T1-GE3
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Datenblatt SIR622DP-T1-GE3 DataSheet
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Auf Lager21674
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | ThunderFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 51.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 7.5V, 10V |
| Rds On(Max) @ Id Vgs | 17.7mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 31 nC @ 7.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1516 pF @ 75 V |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The SIR622DP-T1-GE3 is a Schottky Barrier Diode typically used for applications requiring fast switching, low forward voltage, and high efficiency. This component is manufactured by Vishay, a well-known supplier of electronic components. It is designed to handle reverse voltages typically up to 20V and forward current levels suitable for small to medium power applications. The device is often used in power management circuits, rectification in power supplies, and in various RF applications due to its low forward voltage drop and high-speed switching capabilities.
Key features include:
1. Low Forward Voltage Drop: This enhances energy efficiency by minimizing power loss during the conduction phase.
2. Fast Switching Speed: Essential for high-frequency applications where rapid on-off cycles are necessary.
3. Compact Package: It is usually available in a surface-mount package, making it suitable for space-constrained applications.
4. High Reliability: The construction and materials used ensure high reliability and longevity, even in demanding environments.
These characteristics make the SIR622DP-T1-GE3 suitable for use in a wide range of electronic devices and applications.
Key features include:
1. Low Forward Voltage Drop: This enhances energy efficiency by minimizing power loss during the conduction phase.
2. Fast Switching Speed: Essential for high-frequency applications where rapid on-off cycles are necessary.
3. Compact Package: It is usually available in a surface-mount package, making it suitable for space-constrained applications.
4. High Reliability: The construction and materials used ensure high reliability and longevity, even in demanding environments.
These characteristics make the SIR622DP-T1-GE3 suitable for use in a wide range of electronic devices and applications.
Equivalent
The SIR622DP-T1-GE3 is a MOSFET typically used for switching applications. Equivalent products should match its key specifications such as voltage rating, current rating, and package type. Possible equivalents might include:
1. Infineon BSC026N04LS - A similar N-channel MOSFET with comparable specs.
2. On Semiconductor NTMFS4935N - Another N-channel MOSFET that might match its performance.
3. STMicroelectronics STL120N4F7 - Suitable for similar applications.
Always verify specifications with datasheets for exact matches.
1. Infineon BSC026N04LS - A similar N-channel MOSFET with comparable specs.
2. On Semiconductor NTMFS4935N - Another N-channel MOSFET that might match its performance.
3. STMicroelectronics STL120N4F7 - Suitable for similar applications.
Always verify specifications with datasheets for exact matches.
Features
The SIR622DP-T1-GE3 is a dual P-channel MOSFET produced by Vishay Siliconix. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of -6.3A, accommodating moderate power applications.
2. RDS(ON): This MOSFET offers a low on-state resistance (RDS(ON)), which is crucial for ensuring low power loss and high efficiency, especially in switching applications.
3. Configuration: It comes as a dual-channel device, providing two MOSFETs in a single package, which is useful for compact designs requiring dual switching elements.
4. Package: The device is packaged in a PowerPAK SO-8, known for its thermal performance and compact size, suitable for high-density circuit layouts.
5. Applications: It is typically used in load switching, battery management, and power management systems due to its efficient switching capabilities and low on-resistance.
6. Thermal Performance: The PowerPAK package enables good heat dissipation, enhancing the device’s reliability and performance under thermal stress.
These features make the SIR622DP-T1-GE3 suitable for a variety of consumer electronics and industrial applications that require efficient, compact power management solutions.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of -6.3A, accommodating moderate power applications.
2. RDS(ON): This MOSFET offers a low on-state resistance (RDS(ON)), which is crucial for ensuring low power loss and high efficiency, especially in switching applications.
3. Configuration: It comes as a dual-channel device, providing two MOSFETs in a single package, which is useful for compact designs requiring dual switching elements.
4. Package: The device is packaged in a PowerPAK SO-8, known for its thermal performance and compact size, suitable for high-density circuit layouts.
5. Applications: It is typically used in load switching, battery management, and power management systems due to its efficient switching capabilities and low on-resistance.
6. Thermal Performance: The PowerPAK package enables good heat dissipation, enhancing the device’s reliability and performance under thermal stress.
These features make the SIR622DP-T1-GE3 suitable for a variety of consumer electronics and industrial applications that require efficient, compact power management solutions.
Pinout
The SIR622DP-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a PowerPAK SO-8 package. This device features a total of 8 pins. Here are the pin functions:
1. Pin 1, 2, 3: Source (S1)
2. Pin 4: Gate (G1)
3. Pin 5: Gate (G2)
4. Pin 6, 7, 8: Source (S2)
5. Drain (D1, D2): Connected to the drain pad, typically the large pad on the bottom of the package.
The MOSFET is designed for low on-resistance and fast switching, making it suitable for various applications such as load switching, DC-DC converters, and power management in computing and communication devices.
1. Pin 1, 2, 3: Source (S1)
2. Pin 4: Gate (G1)
3. Pin 5: Gate (G2)
4. Pin 6, 7, 8: Source (S2)
5. Drain (D1, D2): Connected to the drain pad, typically the large pad on the bottom of the package.
The MOSFET is designed for low on-resistance and fast switching, making it suitable for various applications such as load switching, DC-DC converters, and power management in computing and communication devices.
Manufacturer
The SIR622DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for producing discrete semiconductors and passive electronic components. These components are critical in a wide range of electronic devices and systems across various industries, including automotive, industrial, consumer electronics, computing, telecommunications, and more. Vishay's product offerings include diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors, among others. The company is recognized for its innovation and quality in creating components that enhance the performance and reliability of electronic systems.
Application
The SIR622DP-T1-GE3 is a MOSFET component used in various applications where efficient power management is crucial. Its application areas include DC-DC converters, motor control circuits, power management systems, and load switch applications. It is particularly well-suited for use in battery-powered devices, laptops, and portable electronics due to its low on-resistance and fast switching capabilities. Additionally, it can be used in telecom and networking equipment, as well as consumer electronics, to improve energy efficiency and reduce power loss.
Package
The SIR622DP-T1-GE3 is a Schottky rectifier in a surface-mount package. Specifically, it comes in a PowerPAK SO-8 package. This package type is designed for efficient thermal performance and compactness, suitable for applications requiring space savings and high reliability.
