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SIR876ADP-T1-GE3
+StücklisteMOSFET N-CH 100V 40A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR876ADP-T1-GE3
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Datenblatt SIR876ADP-T1-GE3 DataSheet
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Auf Lager21248
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10.8mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 49 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1630 pF @ 50 V |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The SIR876ADP-T1-GE3 is a specific model of a silicon-based, N-channel MOSFET produced by Vishay Siliconix. This device is designed for use in various applications, including power management, load switching, and other general-purpose switching tasks. Key features include a low on-resistance, fast switching speed, and robust thermal performance, making it suitable for high-efficiency applications. It typically operates at low voltages and handles moderate current levels, depending on the specific requirements of the application. The MOSFET is housed in a compact package, often an industry-standard configuration, which aids in saving space on printed circuit boards. It is also optimized for logic level driving, allowing it to be controlled directly by microcontrollers or other digital logic devices. The SIR876ADP-T1-GE3 is part of a series of MOSFETs known for their reliability and efficiency in both consumer electronics and industrial applications.
Equivalent
The SIR876ADP-T1-GE3 is a power MOSFET from Vishay. Its equivalent products would typically be other N-channel MOSFETs with similar voltage and current ratings, on-resistance, and package type. You might consider alternatives from manufacturers like Infineon, ON Semiconductor, STMicroelectronics, or Fairchild, ensuring they match the key specifications such as V_DS, I_D, R_DS(on), and package (e.g., PowerPAK SO-8). Always compare datasheets to ensure compatibility.
Features
The SIR876ADP-T1-GE3 is a N-channel MOSFET transistor commonly used in electronic circuits for switching and amplification purposes. Some key features include:
1. Drain-Source Voltage (Vds): Typically supports high voltage applications.
2. Continuous Drain Current (Id): Can handle substantial current levels, ensuring efficient power handling.
3. Gate-Source Voltage (Vgs): Designed for standard voltage levels to control the MOSFET.
4. RDS(on): Low on-resistance, which reduces power loss and increases efficiency.
5. Package: Often comes in a surface-mount package, facilitating compact circuit design.
6. Temperature Range: Operates effectively over a wide temperature range, suitable for various environmental conditions.
7. Fast Switching Speed: Enhances performance in high-frequency applications.
These features make the SIR876ADP-T1-GE3 suitable for applications requiring efficient power management, such as in power supplies, motor controllers, and audio amplifiers. Always refer to the manufacturer's datasheet for detailed specifications and ratings.
1. Drain-Source Voltage (Vds): Typically supports high voltage applications.
2. Continuous Drain Current (Id): Can handle substantial current levels, ensuring efficient power handling.
3. Gate-Source Voltage (Vgs): Designed for standard voltage levels to control the MOSFET.
4. RDS(on): Low on-resistance, which reduces power loss and increases efficiency.
5. Package: Often comes in a surface-mount package, facilitating compact circuit design.
6. Temperature Range: Operates effectively over a wide temperature range, suitable for various environmental conditions.
7. Fast Switching Speed: Enhances performance in high-frequency applications.
These features make the SIR876ADP-T1-GE3 suitable for applications requiring efficient power management, such as in power supplies, motor controllers, and audio amplifiers. Always refer to the manufacturer's datasheet for detailed specifications and ratings.
Pinout
The SIR876ADP-T1-GE3 is a power MOSFET manufactured by Vishay. It is typically housed in a PowerPAK SO-8 package, which generally features an 8-pin configuration. However, not all pins may be used for electrical connections; some may serve as duplicates to enhance current carrying capability or for thermal performance.
The primary function of the SIR876ADP-T1-GE3 is to act as a switch or amplifier in electronic circuits, particularly in applications requiring efficient power management. It is often used in power conversion, DC-DC converters, motor drives, and similar applications.
Please refer to the specific datasheet for detailed pin configuration and exact functional descriptions, as these details can vary based on manufacturer specifications and intended application.
The primary function of the SIR876ADP-T1-GE3 is to act as a switch or amplifier in electronic circuits, particularly in applications requiring efficient power management. It is often used in power conversion, DC-DC converters, motor drives, and similar applications.
Please refer to the specific datasheet for detailed pin configuration and exact functional descriptions, as these details can vary based on manufacturer specifications and intended application.
Manufacturer
The SIR876ADP-T1-GE3 is manufactured by Vishay Intertechnology. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, the company has grown through acquisitions and organic development, becoming a key player in the electronics industry. Vishay's product portfolio includes diodes, MOSFETs, optoelectronics, capacitors, resistors, and inductors, which are used in a wide range of industries such as automotive, consumer electronics, industrial, computing, telecommunications, and medical. The company is renowned for its focus on innovation, quality, and reliability, providing critical components for the design and functionality of electronic devices.
Application
The SIR876ADP-T1-GE3 is a Schottky barrier rectifier diode. Its application areas include:
1. Power Supply Units: Used for rectification and freewheeling diodes in SMPS and DC-DC converters.
2. Automotive Electronics: Suitable for efficient power management and protection circuits.
3. Consumer Electronics: Applied in devices requiring efficient power conversion and minimal power loss.
4. Telecommunications: Utilized in rectification circuits for telecommunication power systems.
5. Industrial Equipment: Employed in motor drives and industrial automation systems for improved efficiency.
These diodes are valued for their low forward voltage drop and fast switching capabilities.
1. Power Supply Units: Used for rectification and freewheeling diodes in SMPS and DC-DC converters.
2. Automotive Electronics: Suitable for efficient power management and protection circuits.
3. Consumer Electronics: Applied in devices requiring efficient power conversion and minimal power loss.
4. Telecommunications: Utilized in rectification circuits for telecommunication power systems.
5. Industrial Equipment: Employed in motor drives and industrial automation systems for improved efficiency.
These diodes are valued for their low forward voltage drop and fast switching capabilities.
Package
The SIR876ADP-T1-GE3 is a Surface-Mount Package, specifically designed in the TO-251 (IPAK) form factor. This package type is commonly used for power transistors and other semiconductor devices, allowing for efficient thermal management and compact board design.
