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SIRA00DP-T1-GE3
+StücklisteMOSFET N-CH 30V 100A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIRA00DP-T1-GE3
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Datenblatt SIRA00DP-T1-GE3 DataSheet
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Auf Lager28313
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 220 nC @ 10 V |
| Vgs(Max) | +20V, -16V |
| Input Capacitance(Ciss)(Max) @ Vds | 11700 pF @ 15 V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The term "SIRA00DP-T1-GE3" does not directly correspond to any widely recognized concept, product, or document as of my last update in October 2023. It might be a code, identifier, or part number used in specific industries like manufacturing, technology, or engineering. To understand "SIRA00DP-T1-GE3" better, you should provide additional context or consult relevant documentation or sources related to the specific field it pertains to. If it's a proprietary or niche term, the organization or company using it might have specific materials or resources explaining its significance or usage.
Equivalent
The SIRA00DP-T1-GE3 is a MOSFET from Vishay. Equivalent products are typically similar MOSFETs from other manufacturers with comparable specifications such as current, voltage ratings, and package type. Possible equivalents might include:
1. NXP's PSMN040-100MSE
2. ON Semiconductor's NTMFS4C05N
3. Infineon's BSC014N06NS
Ensure to verify the specific parameters and package compatibility when selecting an equivalent.
1. NXP's PSMN040-100MSE
2. ON Semiconductor's NTMFS4C05N
3. Infineon's BSC014N06NS
Ensure to verify the specific parameters and package compatibility when selecting an equivalent.
Features
The SIRA00DP-T1-GE3 is a MOSFET transistor designed for various electronic applications. Key features include:
1. Type: N-channel MOSFET, which is typically used for switching and amplifying electronic signals in circuits.
2. Voltage and Current Ratings: It often boasts a high voltage rating, typically around 100V, and can handle significant current, often around 85A, making it suitable for high-power applications.
3. Low On-Resistance: The device features a low on-resistance, which helps reduce power loss and improve efficiency in switching applications.
4. Package Type: It is usually available in a standard TO-252 package, which is compact and ideal for surface mounting.
5. Thermal Performance: Designed with efficient heat dissipation capabilities to ensure reliable performance in high-temperature environments.
6. Applications: Commonly used in power management applications, DC-DC converters, and other areas where efficient power handling is critical.
These features make the SIRA00DP-T1-GE3 suitable for use in various electronic and power management devices, ensuring efficient and reliable performance.
1. Type: N-channel MOSFET, which is typically used for switching and amplifying electronic signals in circuits.
2. Voltage and Current Ratings: It often boasts a high voltage rating, typically around 100V, and can handle significant current, often around 85A, making it suitable for high-power applications.
3. Low On-Resistance: The device features a low on-resistance, which helps reduce power loss and improve efficiency in switching applications.
4. Package Type: It is usually available in a standard TO-252 package, which is compact and ideal for surface mounting.
5. Thermal Performance: Designed with efficient heat dissipation capabilities to ensure reliable performance in high-temperature environments.
6. Applications: Commonly used in power management applications, DC-DC converters, and other areas where efficient power handling is critical.
These features make the SIRA00DP-T1-GE3 suitable for use in various electronic and power management devices, ensuring efficient and reliable performance.
Pinout
The SIRA00DP-T1-GE3 is a specific model of MOSFET produced by Vishay. It is a dual N-channel MOSFET known for its low on-resistance and high efficiency. In terms of its physical characteristics, the SIRA00DP-T1-GE3 is typically housed in a PowerPAK SO-8 package.
This package usually has a total of 8 pins, which are used for various functions including the source, gate, and drain connections for each of the dual MOSFETs contained within. The dual configuration allows for more compact designs and efficient switching capabilities, often used in applications such as power management and load switching. The exact pin configuration can be found in the product's datasheet, which provides detailed information on the pin assignments and typical applications. Always refer to the official datasheet for precise pin functions and electrical characteristics.
This package usually has a total of 8 pins, which are used for various functions including the source, gate, and drain connections for each of the dual MOSFETs contained within. The dual configuration allows for more compact designs and efficient switching capabilities, often used in applications such as power management and load switching. The exact pin configuration can be found in the product's datasheet, which provides detailed information on the pin assignments and typical applications. Always refer to the official datasheet for precise pin functions and electrical characteristics.
Manufacturer
The SIRA00DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, capacitors, resistors, and inductors, which are used in various electronic devices and systems across numerous industries. Vishay serves markets such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Founded in 1962, Vishay is headquartered in Malvern, Pennsylvania, and is known for its extensive product portfolio and commitment to providing innovative solutions in the electronics industry.
Application
The SIRA00DP-T1-GE3 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used in applications requiring efficient power management and switching. Typical areas include power supply units, motor control, DC-DC converters, battery management systems, and other consumer electronics where energy efficiency and thermal management are crucial. Its low on-resistance and high-speed switching capabilities make it suitable for applications in automotive electronics, industrial automation, and renewable energy systems, where reliability and performance are essential.
Package
The SIRA00DP-T1-GE3 is a surface-mount package type known as a PowerPAK® SO-8. It is designed for efficient thermal performance and is commonly used for power MOSFETs, providing a compact solution for power management applications.
