SIRA14BDP-T1-GE3

Abbildungen dienen nur als Referenz

SIRA14BDP-T1-GE3

+Stückliste

MOSFET N-CH 30V 21A/64A PPAK SO8

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 21A (Ta), 64A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 5.38mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 22 nC @ 10 V
Vgs(Max) +20V, -16V
Input Capacitance(Ciss)(Max) @ Vds 917 pF @ 15 V
Power Dissipation (Max) 3.7W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Übersicht

Description

"SIRA14BDP-T1-GE3" appears to be a specific model or code, but without clear context, it's challenging to provide a detailed introduction. However, such codes are typically identifiers in fields like technology, engineering, or academia. They might represent a model number for a device, a course code, or a part of a larger system.
For instance, in a technical context, "SIRA14BDP" could refer to a series or product line, "T1" might denote a type or version, and "GE3" could indicate a specific feature or geographical model. If it relates to a course, it might denote a specific module or topic within a larger curriculum.
To provide a more precise introduction, additional context about the field or industry it pertains to would be necessary. If you have more details or a specific domain in mind, feel free to share them for a more tailored response.

Equivalent

The SIRA14BDP-T1-GE3 is a MOSFET produced by Vishay. Equivalent products from other manufacturers could include the following, though exact equivalency depends on specific parameters like voltage, current, and package:
1. NXP's PSMN4R8-100BSE
2. Infineon's IPB049N10N3 G
3. ON Semiconductor's NTMFS5C628NL
4. Toshiba's TPH4R10ANL
Always verify the specifications and compatibility before replacing components.

Features

The SIRA14BDP-T1-GE3 is a dual N-channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs, which are useful for high-efficiency switching.
2. Low On-Resistance: Offers low R_DS(on), minimizing power loss and improving performance.
3. Advanced Technology: Built with state-of-the-art silicon technology for enhanced performance.
4. Compact Package: Comes in a small package format, saving space on circuit boards.
5. High-Speed Switching: Supports rapid switching, which is ideal for high-frequency applications.
6. Thermal Performance: Designed for excellent thermal management, improving reliability.
7. Wide Range of Applications: Suitable for DC-DC converters, load switches, and power management functions.
8. RoHS Compliant: Meets environmental regulations for hazardous substances.
These features make the SIRA14BDP-T1-GE3 a versatile choice for designers looking to optimize power efficiency and space in electronic designs.

Pinout

The SIRA14BDP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. Specifically, it is an N-channel MOSFET used for switching and amplification tasks in electronic circuits. It typically comes in a PowerPAK SO-8 package. This package features a standard pin configuration with 8 pins, although not all pins may be used for electrical connection. The pin layout generally includes:
1. Source (S): Multiple pins may be connected internally to the source terminal.
2. Gate (G): Used to control the MOSFET's operation.
3. Drain (D): Typically connected internally to the MOSFET's drain terminal.
The exact pin configuration can vary, so for precise details, it is recommended to consult the datasheet or manufacturer's specifications. These documents outline the specific pin assignments and electrical characteristics crucial for design and application purposes.

Manufacturer

The SIRA14BDP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that specializes in manufacturing discrete semiconductors and passive electronic components. Founded in 1962, it has grown to become one of the world's largest manufacturers in these sectors. The company's products are widely used in various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is known for producing a wide range of components such as diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors.

Application

The SIRA14BDP-T1-GE3 is a power MOSFET transistor typically used in various electronic applications. Its primary application areas include switching power supplies, DC-DC converters, motor control, and power management in consumer electronics. Additionally, it is used in industrial and automotive systems where efficient power handling and switching are crucial. The device's characteristics, such as low on-resistance and fast switching capabilities, make it suitable for high-efficiency power circuits.

Package

The SIRA14BDP-T1-GE3 is a surface-mount device (SMD) package typically used for MOSFETs in electronic circuits. It usually comes in a PowerPAK SO-8 package, which is designed to provide low thermal resistance and efficient heat dissipation. This package type is commonly used in applications requiring compact size and efficient power management.

Produkte, die mit SIRA14BDP-T1-GE3 zusammenhängen