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SIRA14BDP-T1-GE3
+StücklisteMOSFET N-CH 30V 21A/64A PPAK SO8
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HerstellerVishay Siliconix
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Herstellerteil #SIRA14BDP-T1-GE3
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Datenblatt SIRA14BDP-T1-GE3 DataSheet
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Paket PowerPAK-SO-8
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Auf Lager1585
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Ta), 64A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.38mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 10 V |
| Vgs(Max) | +20V, -16V |
| Input Capacitance(Ciss)(Max) @ Vds | 917 pF @ 15 V |
| Power Dissipation (Max) | 3.7W (Ta), 36W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
For instance, in a technical context, "SIRA14BDP" could refer to a series or product line, "T1" might denote a type or version, and "GE3" could indicate a specific feature or geographical model. If it relates to a course, it might denote a specific module or topic within a larger curriculum.
To provide a more precise introduction, additional context about the field or industry it pertains to would be necessary. If you have more details or a specific domain in mind, feel free to share them for a more tailored response.
Equivalent
1. NXP's PSMN4R8-100BSE
2. Infineon's IPB049N10N3 G
3. ON Semiconductor's NTMFS5C628NL
4. Toshiba's TPH4R10ANL
Always verify the specifications and compatibility before replacing components.
Features
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs, which are useful for high-efficiency switching.
2. Low On-Resistance: Offers low R_DS(on), minimizing power loss and improving performance.
3. Advanced Technology: Built with state-of-the-art silicon technology for enhanced performance.
4. Compact Package: Comes in a small package format, saving space on circuit boards.
5. High-Speed Switching: Supports rapid switching, which is ideal for high-frequency applications.
6. Thermal Performance: Designed for excellent thermal management, improving reliability.
7. Wide Range of Applications: Suitable for DC-DC converters, load switches, and power management functions.
8. RoHS Compliant: Meets environmental regulations for hazardous substances.
These features make the SIRA14BDP-T1-GE3 a versatile choice for designers looking to optimize power efficiency and space in electronic designs.
Pinout
1. Source (S): Multiple pins may be connected internally to the source terminal.
2. Gate (G): Used to control the MOSFET's operation.
3. Drain (D): Typically connected internally to the MOSFET's drain terminal.
The exact pin configuration can vary, so for precise details, it is recommended to consult the datasheet or manufacturer's specifications. These documents outline the specific pin assignments and electrical characteristics crucial for design and application purposes.