SIRA14DP-T1-GE3

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SIRA14DP-T1-GE3

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MOSFET N-CH 30V 58A PPAK SO-8

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 58A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 5.1mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 29 nC @ 10 V
Vgs(Max) +20V, -16V
Input Capacitance(Ciss)(Max) @ Vds 1450 pF @ 15 V
Power Dissipation (Max) 3.6W (Ta), 31.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Übersicht

Description

The SIRA14DP-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in compact applications. Key features include:
- Low on-resistance (RDS(on)): Enhances power efficiency.
- Small PowerPAK® SC-70 package: Saves board space.
- Gate charge optimization: Reduces switching losses.
- -20V drain-source voltage (VDS): Suitable for low-voltage circuits.
Ideal for load switching, power distribution, and battery management in portable devices like smartphones, tablets, and wearables. The GE3 suffix indicates halogen-free, RoHS-compliant construction.
For detailed specs, refer to the datasheet.

Equivalent

The SIRA14DP-T1-GE3 (a dual P-channel MOSFET) has equivalents like:
- SI4435DY-T1-GE3 (Vishay)
- DMG1012UW-7 (Diodes Inc.)
- AO3401A (Alpha & Omega)
- BSS84 (NXP/Infineon)
These are similar in specs (voltage, current, package). Always verify datasheets for exact compatibility.

Features

The SIRA14DP-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-Source)
- Current Rating: -14A (Continuous Drain Current)
- Low On-Resistance: 36mΩ (max) @ VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: SOT-23 (Compact surface-mount design)
- Low Gate Charge: Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
- RoHS Compliant: Lead-free and environmentally friendly
Ideal for power management, load switching, and DC-DC conversion in automotive, industrial, and consumer electronics.

Pinout

The SIRA14DP-T1-GE3 is a dual P-channel MOSFET in a DFN-6 (2x2) package with 6 pins.
### Pin Functions:
1. Pins 1, 3, 5 (Drain - D): Common drain connections for both MOSFETs.
2. Pins 2, 4 (Gate - G): Separate gate controls for each MOSFET.
3. Pin 6 (Source - S): Common source connection.
### Key Features:
- -30V drain-source voltage (VDS)
- -14A continuous drain current (ID)
- Low on-resistance (RDS(on))
- Optimized for power management in compact designs
This MOSFET is commonly used in load switching, battery protection, and DC-DC conversion.

Application

The SIRA14DP-T1-GE3 is a dual P-channel MOSFET used in power management applications. Key areas include:
- Power Supplies: DC-DC converters, voltage regulation.
- Battery Management: Protection circuits, charge/discharge control.
- Load Switching: Power distribution in portable devices.
- Automotive Systems: Infotainment, lighting, and ECU power control.
- Industrial Electronics: Motor drives and power inverters.
Its low on-resistance and high efficiency make it suitable for compact, energy-efficient designs.

Package

The SIRA14DP-T1-GE3 is a dual P-channel MOSFET in a DFN-8 (3x3mm) surface-mount package. It features a compact, leadless design for high-density PCB applications, offering efficient thermal performance and space-saving benefits. Suitable for power management in portable electronics and other low-voltage systems.

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