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SIRA99DP-T1-GE3
+StücklisteMOSFET P-CH 30V 47.9A/195A PPAK
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HerstellerVishay Siliconix
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Herstellerteil #SIRA99DP-T1-GE3
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Auf Lager7758
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| Base Product Number | SIRA99 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 47.9A (Ta), 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Vgs (Max) | +16V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10955 pF @ 15 V |
| Power Dissipation (Max) | 6.35W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key components of the training include understanding compliance frameworks, risk assessment methodologies, and the application of governance principles. Participants engage in interactive sessions, case studies, and practical exercises to reinforce learning and application in real-world scenarios.
This training is particularly relevant for professionals in finance, healthcare, and other sectors where regulatory oversight is critical. Upon completion, attendees can expect to improve their strategic decision-making and enhance their organization's compliance posture.
Overall, SIRA99DP-T1-GE3 serves as a valuable resource for those looking to advance their career in compliance and risk management.
Equivalent
Features
1. Processor: Utilizes a powerful multi-core CPU for efficient processing.
2. Memory: Offers expandable RAM options for enhanced multitasking capabilities.
3. Storage: Supports various storage interfaces, including SSD and HDD, ensuring fast data access.
4. Connectivity: Equipped with multiple Ethernet ports, USB interfaces, and serial ports for versatile connectivity.
5. Robust Design: Built to withstand harsh industrial environments, featuring dust and moisture resistance.
6. Graphics: Integrated graphics support for visual applications and displays.
7. Operating System Compatibility: Compatible with various operating systems, including Windows and Linux.
8. Expansion Slots: Includes PCIe slots for additional functionality and customization.
9. Power Efficiency: Designed for low power consumption while maintaining high performance.
Overall, the SIRA99DP-T1-GE3 is ideal for automation, IoT, and other industrial applications requiring reliability and efficiency.
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
7. Common Source (typically connected to ground or a common point).
8. Tab/Heatsink - Used for heat dissipation.
This device is suitable for applications like power management and DC-DC converters, providing efficient switching with low on-resistance.
Manufacturer
Application
1. Automotive Industry: For monitoring and controlling engine parameters.
2. Manufacturing: In automation systems for quality control and process monitoring.
3. HVAC Systems: For temperature and humidity sensing to optimize climate control.
4. Building Automation: In smart buildings for energy management and occupancy sensing.
5. Robotics: For position and motion feedback in robotic systems.
6. Healthcare: In medical equipment for patient monitoring.
These applications leverage the sensor's precision and reliability in critical environments.